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    Silicon-selective dry etch for carbon-containing films
    1.
    发明授权
    Silicon-selective dry etch for carbon-containing films 有权
    用于含碳膜的硅选择性干蚀刻

    公开(公告)号：US08211808B2

    公开(公告)日：2012-07-03

    申请号：US12551180

    申请日：2009-08-31

    申请人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

    发明人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3065 ,  H01L21/31116

    摘要： A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

    摘要翻译： 描述了一种蚀刻含硅和碳的材料的方法，并且包括与活性氧气流组合的SiConi TM蚀刻。 可以在SiConi™蚀刻之前引入活性氧，从而减少近表面区域的碳含量，并允许SiConi™蚀刻进行得更快。 或者，可以在SiConi TM蚀刻期间引入活性氧，进一步提高有效蚀刻速率。

    SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS
    2.
    发明申请
    SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS 有权
    用于含碳膜的硅选择干燥剂

    公开(公告)号：US20110053380A1

    公开(公告)日：2011-03-03

    申请号：US12551180

    申请日：2009-08-31

    申请人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

    发明人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/3065 ,  H01L21/31116

    摘要： A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

    摘要翻译： 描述了一种蚀刻含硅和碳的材料的方法，并且包括与活性氧气流组合的SiConi TM蚀刻。 可以在SiConi™蚀刻之前引入活性氧，从而减少近表面区域的碳含量，并允许SiConi™蚀刻进行得更快。 或者，可以在SiConi TM蚀刻期间引入活性氧，进一步提高有效蚀刻速率。

    FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING
    3.
    发明申请
    FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
    用于半导体加工的可流动的硅 - 碳 - 氮层

    公开(公告)号：US20130217240A1

    公开(公告)日：2013-08-22

    申请号：US13590611

    申请日：2012-08-21

    申请人： Abhijit Basu Mallick ,  Nitin K. Ingle ,  Linlin Wang ,  Brian S. Underwood

    发明人： Abhijit Basu Mallick ,  Nitin K. Ingle ,  Linlin Wang ,  Brian S. Underwood

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02274 ,  C23C16/36 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0234 ,  H01L21/31111

    摘要： Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.

    摘要翻译： 描述了在半导体衬底上形成电介质层的方法。 所述方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。 含硅前体和带电的含氮前体可以在化学气相沉积室中反应，以在基底上沉积可流动的硅 - 碳 - 氮材料。 所述方法还可以包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成电介质层。

    WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS
    4.
    发明申请
    WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 审中-公开
    在可流动CVD过程中形成的介电材料上进行的湿氧化过程

    公开(公告)号：US20110151677A1

    公开(公告)日：2011-06-23

    申请号：US12643196

    申请日：2009-12-21

    申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC分类号： H01L21/316

    CPC分类号： H01L21/02326 ,  H01L21/02343

    摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

    摘要翻译： 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

    In-situ ozone cure for radical-component CVD
    6.
    发明授权
    In-situ ozone cure for radical-component CVD 有权
    用于自由基组分CVD的原位臭氧固化

    公开(公告)号：US08304351B2

    公开(公告)日：2012-11-06

    申请号：US12972711

    申请日：2010-12-20

    申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

    摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

    摘要翻译： 描述形成电介质层的方法。 所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。 通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。 可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。 在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

    TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS
    8.
    发明申请
    TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS 审中-公开
    在含硅和含氮层的流动沉积后减少蚀刻速率的处理

    公开(公告)号：US20130217241A1

    公开(公告)日：2013-08-22

    申请号：US13590702

    申请日：2012-08-21

    申请人： Brian S. Underwood ,  Linlin Wang ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    发明人： Brian S. Underwood ,  Linlin Wang ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02274 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31111

    摘要： Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

    摘要翻译： 描述了用于在半导体衬底上形成和固化可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化的氮含量的前驱物，以加速氮与含较低沉积室的含硅和碳的前体的反应 温度。 处理初始可流动的含硅碳和氮的层以去除能够流动的组分，但在沉积后不再需要。 组分的去除增加了耐蚀刻性，以便允许间隙填充硅 - 碳 - 和含氮层在后续处理过程中保持完整。 已经发现这些处理降低了暴露于大气中的膜的性质的演变。

    IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD
    9.
    发明申请
    IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 有权
    用于放射性组分CVD的现场臭氧固化

    公开(公告)号：US20120003840A1

    公开(公告)日：2012-01-05

    申请号：US12972711

    申请日：2010-12-20

    申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： H01L21/3105 ,  B82Y40/00

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

    摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

    摘要翻译： 描述形成电介质层的方法。 所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。 通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。 可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。 在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

    Wet oxidation process performed on a dielectric material formed from a flowable CVD process
    10.
    发明授权
    Wet oxidation process performed on a dielectric material formed from a flowable CVD process 有权
    在由可流动CVD工艺形成的电介质材料上进行湿氧化处理

    公开(公告)号：US09390914B2

    公开(公告)日：2016-07-12

    申请号：US13396410

    申请日：2012-02-14

    申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02326 ,  H01L21/02343

    摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

    摘要翻译： 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。