公开(公告)号：US08211808B2

公开(公告)日：2012-07-03

申请号：US12551180

申请日：2009-08-31

申请人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

发明人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  H01L21/31116

摘要： A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

摘要翻译： 描述了一种蚀刻含硅和碳的材料的方法，并且包括与活性氧气流组合的SiConi TM蚀刻。 可以在SiConi™蚀刻之前引入活性氧，从而减少近表面区域的碳含量，并允许SiConi™蚀刻进行得更快。 或者，可以在SiConi TM蚀刻期间引入活性氧，进一步提高有效蚀刻速率。

公开(公告)号：US20110053380A1

公开(公告)日：2011-03-03

申请号：US12551180

申请日：2009-08-31

申请人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

发明人： Kedar Sapre ,  Jing Tang ,  Linlin Wang ,  Abhijit Basu Mallick ,  Nitin Ingle

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/31116

摘要： A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

摘要翻译： 描述了一种蚀刻含硅和碳的材料的方法，并且包括与活性氧气流组合的SiConi TM蚀刻。 可以在SiConi™蚀刻之前引入活性氧，从而减少近表面区域的碳含量，并允许SiConi™蚀刻进行得更快。 或者，可以在SiConi TM蚀刻期间引入活性氧，进一步提高有效蚀刻速率。

公开(公告)号：US08759223B2

公开(公告)日：2014-06-24

申请号：US13593412

申请日：2012-08-23

申请人： Kedar Sapre ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

发明人： Kedar Sapre ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

IPC分类号： H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116

摘要： A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.

摘要翻译： 蚀刻衬底的方法包括在衬底上形成由氧化硅，氮化硅或氮氧化硅组成的多个双重构图特征。 具有双重图案化特征的基板被提供到处理区域。 包括三氟化氮，氨和氢的蚀刻气体在远程室中通电。 通电的蚀刻气体被引入到工艺区中以蚀刻双重图案化特征以在衬底上形成固体残余物。 固体残余物通过将基底加热至至少约100℃的温度升华。

公开(公告)号：US20130048605A1

公开(公告)日：2013-02-28

申请号：US13593412

申请日：2012-08-23

申请人： Kedar SAPRE ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

发明人： Kedar SAPRE ,  Jing Tang ,  Ajay Bhatnagar ,  Nitin Ingle ,  Shankar Venkataraman

IPC分类号： B44C1/22

CPC分类号： H01L21/31144 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116

摘要： A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C.

摘要翻译： 蚀刻衬底的方法包括在衬底上形成由氧化硅，氮化硅或氮氧化硅组成的多个双重构图特征。 具有双重图案化特征的基板被提供到处理区域。 包括三氟化氮，氨和氢的蚀刻气体在远程室中通电。 通电的蚀刻气体被引入到工艺区中以蚀刻双重图案化特征以在衬底上形成固体残余物。 固体残余物通过将基底加热至至少约100℃的温度升华。

公开(公告)号：US20120196447A1

公开(公告)日：2012-08-02

申请号：US13197487

申请日：2011-08-03

申请人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

发明人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116

摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

摘要翻译： 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

公开(公告)号：US08741778B2

公开(公告)日：2014-06-03

申请号：US13197487

申请日：2011-08-03

申请人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

发明人： Dongqing Yang ,  Jing Tang ,  Nitin Ingle

IPC分类号： H01L21/302

CPC分类号： H01L21/31116

摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

摘要翻译： 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

公开(公告)号：US08475674B2

公开(公告)日：2013-07-02

申请号：US12839651

申请日：2010-07-20

申请人： Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

发明人： Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

IPC分类号： B44C1/22

CPC分类号： H01L21/31116 ,  H01J37/32357

摘要： Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

摘要翻译： 描述了干法蚀刻含硅介电膜的方法。 这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。 部分或完全避免固体残余物的积累增加了蚀刻速率。

公开(公告)号：US20110266252A1

公开(公告)日：2011-11-03

申请号：US12839651

申请日：2010-07-20

申请人： Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

发明人： Kiran V. Thadani ,  Jing Tang ,  Nitin Ingle ,  Dongqing Yang

IPC分类号： H05K3/00 ,  C23F1/02

CPC分类号： H01L21/31116 ,  H01J37/32357

摘要： Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

摘要翻译： 描述了干法蚀刻含硅介电膜的方法。 这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。 部分或完全避免固体残余物的积累增加了蚀刻速率。

公开(公告)号：US08501629B2

公开(公告)日：2013-08-06

申请号：US12646030

申请日：2009-12-23

申请人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang

发明人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01J2237/3341

摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

摘要翻译： 描述了一种蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有比氟更大或更小的氢流量比的SiConi TM蚀刻。 已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率差异。 降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，维持相对高的衬底温度并以多个步骤执行SiConi TM。 单独或组合的这些方法中的每一种用于通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

公开(公告)号：US08435902B2

公开(公告)日：2013-05-07

申请号：US12959155

申请日：2010-12-02

申请人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang ,  Shankar Venkataraman

发明人： Jing Tang ,  Nitin Ingle ,  Dongqing Yang ,  Shankar Venkataraman

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  C23F3/00

CPC分类号： H01L21/31116 ,  H01J37/32091

摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.

摘要翻译： 描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。 该方法包括两个干蚀刻循环。 第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。 剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。