发明申请
- 专利标题： INSULATING FILM MATERIAL, METHOD OF FILM FORMATION USING INSULATING FILM MATERIAL, AND INSULATING FILM
- 专利标题（中）： 绝缘膜材料，使用绝缘膜材料的膜形成方法和绝缘膜
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申请号： US12864127申请日： 2009-01-20
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公开(公告)号： US20110130584A1公开(公告)日： 2011-06-02
- 发明人: Takahisa Ohno , Nobuo Tajima , Satoshi Hasaka , Minoru Inoue , Kaoru Sakoda , Yoshiaki Inaishi , Manabu Shinriki , Kazuhiro Miyazawa
- 申请人： Takahisa Ohno , Nobuo Tajima , Satoshi Hasaka , Minoru Inoue , Kaoru Sakoda , Yoshiaki Inaishi , Manabu Shinriki , Kazuhiro Miyazawa
- 优先权： JP2008-013105 20080123
- 国际申请： PCT/JP2009/050782 WO 20090120
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C07F7/08
摘要：
An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.
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