公开(公告)号：US08497391B2

公开(公告)日：2013-07-30

申请号：US12864127

申请日：2009-01-20

申请人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/00 ,  C07F7/08 ,  H01L21/31

CPC分类号： C07F7/0807 ,  C23C16/30 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76829

摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

摘要翻译： 由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。 根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。 在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

公开(公告)号：US20110159212A1

公开(公告)日：2011-06-30

申请号：US13060525

申请日：2009-09-01

申请人： Takahisa Ohno ,  Nonuo Tajima ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nonuo Tajima ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/44 ,  C07F7/08 ,  H05H1/24

CPC分类号： C23C16/401 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/314

摘要： An insulating film material for plasma CVD, wherein the material is represented by the chemical formula (1); a film forming method using the material; and an insulating film; (in the formula, m and n represent integer of 3 to 6, and m and n may be the same or different from each other in a molecule.)

摘要翻译： 一种用于等离子体CVD的绝缘膜材料，其中该材料由化学式（1）表示; 使用该材料的成膜方法; 和绝缘膜; （式中，m和n表示3〜6的整数，m和n在分子中可以相同也可以不同。）

公开(公告)号：US20110130584A1

公开(公告)日：2011-06-02

申请号：US12864127

申请日：2009-01-20

申请人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/00 ,  C07F7/08

CPC分类号： C07F7/0807 ,  C23C16/30 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76829

摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

摘要翻译： 由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。 根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。 在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

公开(公告)号：US20110313184A1

公开(公告)日：2011-12-22

申请号：US13147719

申请日：2010-02-05

申请人： Nobuo Tajima ,  Shuji Nagano ,  Yoshiaki Inaishi ,  Hideharu Shimizu ,  Yoshi Ohashi ,  Takeshi Kada ,  Shigeki Matsumoto ,  Yong hua Xu

发明人： Nobuo Tajima ,  Shuji Nagano ,  Yoshiaki Inaishi ,  Hideharu Shimizu ,  Yoshi Ohashi ,  Takeshi Kada ,  Shigeki Matsumoto ,  Yong hua Xu

IPC分类号： C07F7/08 ,  C23C16/30 ,  C23C16/56 ,  C07F7/18

CPC分类号： H01L21/76801 ,  C23C16/30 ,  C23C16/5096 ,  H01L21/02123 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3148 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film material for plasma CVD of the present invention is constituted of a silicon compound including two hydrocarbon groups bonded to each other to form a ring structure together with a silicon atom, or at least one branched hydrocarbon group, wherein within the branched hydrocarbon group, α-carbon that is a carbon atom bonded to the silicon atom constitutes a methylene group, and β-carbon that is a carbon atom bonded to the methylene group or γ-carbon that is a carbon atom bonded to the β-carbon is a branching point.

摘要翻译： 本发明的等离子体CVD用绝缘膜材料由包含两个彼此键合的烃基的硅化合物构成，与硅原子或至少一个支链烃基一起形成环状结构，其中在支链烃基 ，与硅原子键合的碳原子的α-碳构成亚甲基，作为与亚甲基键合的碳原子的碳原子或与碳原子结合的碳原子的γ-碳 是一个分支点。

公开(公告)号：US06190457B1

公开(公告)日：2001-02-20

申请号：US08952517

申请日：1997-11-21

申请人： Takayuki Arai ,  Junichi Hidaka ,  Koh Matsumoto ,  Nakao Akutsu ,  Kazuhiro Aoyama ,  Yoshiaki Inaishi ,  Ichitaro Waki

发明人： Takayuki Arai ,  Junichi Hidaka ,  Koh Matsumoto ,  Nakao Akutsu ,  Kazuhiro Aoyama ,  Yoshiaki Inaishi ,  Ichitaro Waki

IPC分类号： C23C1600

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45591 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/42

摘要： Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11. The CVD system contains two separators 18, 19 disposed in the reactor 10 on the upstream side of the substrate mounting section to be parallel to the surface of the substrate 11 so as to define in the reactor three parallel layers of passages consisting of a first passage 20, a second passage 21 and a third passage 22; a first CVD gas introducing pipe 23 communicating to the first passage 20; a second CVD gas introducing pipe 24 communicating to the second passage 21; and a deposition accelerating gas introducing pipe 25 communicating to the third passage 22.

摘要翻译： 提供一种可以生长具有最少缺陷并且具有高源气体利用效率和提高的生产率的两种或更多种组分的优异的化合物半导体薄膜的CVD系统和CVD方法。 根据CVD系统和CVD工艺，将平行于放置在反应器10中的基板11的表面平行地引入至少两种源气体，以在基板的表面上生长两个或更多个部件的化合物半导体薄膜 CVD系统包含设置在反应器10中的两个分离器18,19，其位于衬底安装部分的上游侧，以平行于衬底11的表面，以便在反应器中限定三个平行的通道层， 第一通道20，第二通道21和第三通道22; 与第一通道20连通的第一CVD气体导入管23; 与第二通道21连通的第二CVD气体导入管24; 以及与第三通路22连通的沉积加速气体导入管25。