公开(公告)号：US08497391B2

公开(公告)日：2013-07-30

申请号：US12864127

申请日：2009-01-20

申请人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/00 ,  C07F7/08 ,  H01L21/31

CPC分类号： C07F7/0807 ,  C23C16/30 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76829

摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

摘要翻译： 由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。 根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。 在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

公开(公告)号：US20110130584A1

公开(公告)日：2011-06-02

申请号：US12864127

申请日：2009-01-20

申请人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/00 ,  C07F7/08

CPC分类号： C07F7/0807 ,  C23C16/30 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76829

摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

摘要翻译： 由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。 根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。 在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

公开(公告)号：US20080128833A1

公开(公告)日：2008-06-05

申请号：US11660925

申请日：2005-08-25

申请人： Takaaki Kawahara ,  Kazuyoshi Torii ,  Minoru Inoue ,  Satoshi Hasaka

发明人： Takaaki Kawahara ,  Kazuyoshi Torii ,  Minoru Inoue ,  Satoshi Hasaka

IPC分类号： H01L29/78 ,  C09D1/00 ,  H01L21/316

CPC分类号： H01L21/02181 ,  C23C16/308 ,  C23C16/40 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A high-dielectric-constant film including hafnium, wherein the above-mentioned high-dielectric-constant film includes deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature. In a field-effect transistor provided with the high-dielectric-constant film including hafnium, the interface state density at the interface between a silicon substrate and a gate dielectric film decreases and carrier mobility in the gate dielectric film increases. In the present invention, a high-dielectric-constant constant second dielectric film, which is a thin film including hafnium such as HfSiON or HfAlOx and including deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature, is used as the gate dielectric film of the field-effect transistor.

摘要翻译： 包括铪的高介电常数膜，其中上述高介电常数膜包括比自然界中存在的氘与氢的比例高的氘。 在设置有包含铪的高介电常数膜的场效应晶体管中，硅衬底和栅极电介质膜之间的界面处的界面态密度降低，并且栅极电介质膜中的载流子迁移率增加。 在本发明中，高介电常数常数第二电介质膜是包括铪如HfSiON或HfAlO x x的薄膜，并且包含氘的比例高于氘与氢的比例 本质上是用作场效应晶体管的栅极电介质膜。

公开(公告)号：US08088686B2

公开(公告)日：2012-01-03

申请号：US12226422

申请日：2007-04-18

申请人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

发明人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

IPC分类号： H01L21/4763

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105

摘要： The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.

摘要翻译： 本发明提供一种补偿绝缘膜的劣化的方法，其在通过等离子体处理劣化的绝缘膜的补救处理中，不会在诸如铜布线层的布线材料上留下残留的补救剂，可以使用 干法，对大批量生产具有优异的适用性。 通过等离子体处理劣化的绝缘膜与由具有至少一个硝基和羰基的分子结构的化合物组成的补救剂与烃基和氢中的至少一种接触 组。

公开(公告)号：US20090099384A1

公开(公告)日：2009-04-16

申请号：US12226422

申请日：2007-04-18

申请人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

发明人： Shuji Nagano ,  Satoshi Hasaka ,  Minoru Inoue ,  Toshinori Shibata

IPC分类号： C07C69/96 ,  C07C205/02 ,  C07C49/12 ,  C07C49/08 ,  C07C49/10 ,  C07C49/203 ,  C07C49/14 ,  C07C47/06 ,  C07C53/12

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105

摘要： The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.

摘要翻译： 本发明提供一种补偿绝缘膜的劣化的方法，其在通过等离子体处理劣化的绝缘膜的补救处理中，不会在诸如铜布线层的布线材料上留下残留的补救剂，可以使用 干法，对大批量生产具有很好的适用性。 通过等离子体处理劣化的绝缘膜与由具有至少一个硝基和羰基的分子结构的化合物组成的补救剂与烃基和氢中的至少一种接触 组。

公开(公告)号：US08759200B2

公开(公告)日：2014-06-24

申请号：US13135031

申请日：2011-06-23

申请人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, Jr. ,  Hong He ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

发明人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, Jr. ,  Hong He ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

IPC分类号： H01L21/205

CPC分类号： H01L21/02532 ,  C23C16/30 ,  C23C16/325 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

摘要翻译： 本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速 小于约550℃，压力范围为约10mTorr-200Torr。 此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳 。

公开(公告)号：US06206026B1

公开(公告)日：2001-03-27

申请号：US09509346

申请日：2000-03-27

申请人： Ryuichiro Isaki ,  Takuya Ikeda ,  Satoshi Hasaka ,  Hideharu Hasegawa

发明人： Ryuichiro Isaki ,  Takuya Ikeda ,  Satoshi Hasaka ,  Hideharu Hasegawa

IPC分类号： F16K1100

CPC分类号： F16K1/305 ,  F16K7/14 ,  Y10T137/4259

摘要： A valve for a gas cylinder consisting essentially of a valve body provided with a valve chamber containing a valving element which opens and closes an annular valve seat, and a gas cylinder plugging end portion and a pipe-connecting port both formed on the valve body. The gas cylinder plugging end portion contains an upstream side gas channel communicating at one extremity to an end thereof and at the other extremity to an internal circumference of the valve seat. The port contains two downstream side gas channels each opening to an end thereof and at the other extremity to an external circumference of the valve seat. A metal connector can be fitted in the port. The metal connector contains two channels connected to the two downstream side gas channels respectively. Valve chamber openings of the downstream side gas channels are located to oppose each other across the valve seat.

摘要翻译： 一种用于气瓶的阀，主要由阀体构成，该阀体设置有包含打开和关闭环形阀座的阀元件的阀室，以及形成在阀体上的气瓶堵塞端部和管连接口。 气瓶堵塞端部包含一端上端连通的上游侧气体通道，另一端包含在阀座的内周。 该端口包含两个下游侧气体通道，每个下游侧气体通道各自通向其端部并且在另一个端部处于阀座的外部圆周。 可以在端口安装金属连接器。 金属连接器包括分别连接到两个下游侧气体通道的两个通道。 下游侧气体通道的阀室开口位于阀座上彼此相对。

公开(公告)号：US20120024223A1

公开(公告)日：2012-02-02

申请号：US13135033

申请日：2011-06-23

申请人： Robert Torres, JR. ,  Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant

发明人： Robert Torres, JR. ,  Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant

IPC分类号： C30B25/14 ,  C30B25/12

CPC分类号： H01L21/02529 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

摘要翻译： 环己硅烷用于化学气相沉积方法以将外延含硅膜沉积在基材上。 这种方法在半导体制造中可用于提供各种优点，包括在异质表面上的均匀沉积，高沉积速率和更高的制造生产率。 此外，可以通过在改进的CVD条件下使用环己硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以原位掺杂晶体Si以含有相对高水平的取代碳 。

公开(公告)号：US06910602B2

公开(公告)日：2005-06-28

申请号：US10304812

申请日：2002-11-26

申请人： Satoshi Hasaka ,  Yutaka Horiuchi ,  Masao Koizumi

发明人： Satoshi Hasaka ,  Yutaka Horiuchi ,  Masao Koizumi

IPC分类号： F17C13/04 ,  B67D5/58 ,  B65D83/00

CPC分类号： F17C13/04 ,  F17C2201/0109 ,  F17C2205/0329 ,  F17C2205/0332 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0385 ,  F17C2205/0391 ,  F17C2221/03 ,  F17C2221/05 ,  F17C2223/0123 ,  F17C2223/035 ,  F17C2227/044 ,  F17C2250/043 ,  F17C2250/0626 ,  F17C2265/012 ,  F17C2270/0518 ,  Y02E60/321

摘要： A container valve, attached to a gas container, wherein the container valve has a pressure reducing function, and is inside a valve block in the gas container. In the valve block, the container valve comprises a gas filling passage in which a filling valve is installed, a gas lead-out passage in which a lead-out valve is installed, and a pressure regulator arranged at an upstream side of the lead-out valve in the gas lead-out passage. The container valve can safely supply gas under a reduced pressure for use by opening the container valve of a container whose pressure is high and gas can be filled easily into the container. The container valve can be miniaturized and the purging operation for supplying high purity gas can be performed.

摘要翻译： 一种连接到气体容器的容器阀，其中容器阀具有减压功能，并且在气体容器中的阀块内。 在阀块中，容器阀包括安装有填充阀的气体填充通道，安装有引出阀的气体引出通道和布置在引导阀的上游侧的压力调节器， 气体导出通道中的出气阀。 容器阀可以安全地在减压下供给气体，以通过打开压力高的容器的容器阀，并且气体可以容易地填充到容器中。 容器阀可以小型化，并且可以进行用于提供高纯度气体的清洗操作。

公开(公告)号：US20120003819A1

公开(公告)日：2012-01-05

申请号：US13135031

申请日：2011-06-23

申请人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, JR. ,  He Hong ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

发明人： Terry Arthur Francis ,  Satoshi Hasaka ,  Paul David Brabant ,  Robert Torres, JR. ,  He Hong ,  Alexander Reznicek ,  Thomas N. Adam ,  Devendra K. Sadana

IPC分类号： H01L21/205

CPC分类号： H01L21/02532 ,  C23C16/30 ,  C23C16/325 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636

摘要： The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

摘要翻译： 本发明公开了在改进的化学气相沉积（mCVD）条件下，外延硅膜可以通过将包含在腔室内的衬底暴露于相对高的载气流量与在较低的硅前体流速 小于约550℃，压力范围为约10mTorr-200Torr。 此外，通过在改进的CVD条件下使用四硅烷作为硅源和含碳气体如十二烷基甲基环己硅烷或四甲基二硅烷以相对高的流速进行沉积，可以将晶体Si原位掺杂以含有相对高水平的取代碳 。