公开(公告)号：US08497391B2

公开(公告)日：2013-07-30

申请号：US12864127

申请日：2009-01-20

申请人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/00 ,  C07F7/08 ,  H01L21/31

CPC分类号： C07F7/0807 ,  C23C16/30 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76829

摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

摘要翻译： 由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。 根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。 在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

公开(公告)号：US20110130584A1

公开(公告)日：2011-06-02

申请号：US12864127

申请日：2009-01-20

申请人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nobuo Tajima ,  Satoshi Hasaka ,  Minoru Inoue ,  Kaoru Sakoda ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/00 ,  C07F7/08

CPC分类号： C07F7/0807 ,  C23C16/30 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/76829

摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

摘要翻译： 由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。 根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。 在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

公开(公告)号：US20110159212A1

公开(公告)日：2011-06-30

申请号：US13060525

申请日：2009-09-01

申请人： Takahisa Ohno ,  Nonuo Tajima ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

发明人： Takahisa Ohno ,  Nonuo Tajima ,  Yoshiaki Inaishi ,  Manabu Shinriki ,  Kazuhiro Miyazawa

IPC分类号： C23C16/44 ,  C07F7/08 ,  H05H1/24

CPC分类号： C23C16/401 ,  H01L21/02123 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/314

摘要： An insulating film material for plasma CVD, wherein the material is represented by the chemical formula (1); a film forming method using the material; and an insulating film; (in the formula, m and n represent integer of 3 to 6, and m and n may be the same or different from each other in a molecule.)

摘要翻译： 一种用于等离子体CVD的绝缘膜材料，其中该材料由化学式（1）表示; 使用该材料的成膜方法; 和绝缘膜; （式中，m和n表示3〜6的整数，m和n在分子中可以相同也可以不同。）

公开(公告)号：US06290062B1

公开(公告)日：2001-09-18

申请号：US09444873

申请日：1999-11-22

申请人： Takahisa Ohno ,  Nobuhiko Sato

发明人： Takahisa Ohno ,  Nobuhiko Sato

IPC分类号： B65D8500

摘要： Packaging for sports equipment has an enclosure and a hologram formed on at least a portion thereof for diffusely reflecting incident light. A marking layer is formed on the hologram and of an organic ink, an inorganic ink, or an ink containing a dye or pigment having the color attributes of lightness, saturation and hue, at least one of which varies due to interference with diffusely reflected light from the hologram. Alternatively, the marking layer is formed on the first hologram by laminating one or more second hologram layers thereon. This construction gives the packaging a highly decorative and elegant appearance.

公开(公告)号：US06354436B2

公开(公告)日：2002-03-12

申请号：US09492810

申请日：2000-01-28

申请人： Takahisa Ohno

发明人： Takahisa Ohno

IPC分类号： B65D8558

CPC分类号： B65D5/62

摘要： A paper base having a thin metallization on at least a portion of its surface is folded into a box for accommodating golf balls. The box has an elegant appearance, can be disposed of without problems, and can be effectively manufactured.

摘要翻译： 在其表面的至少一部分上具有薄金属化的纸基被折叠成用于容纳高尔夫球的盒子。 该箱子外形美观，可以无故处理，可以有效地制造。

公开(公告)号：US5396082A

公开(公告)日：1995-03-07

申请号：US205771

申请日：1994-03-04

申请人： Yoshinori Wada ,  Kazumi Wada ,  Takahisa Ohno

发明人： Yoshinori Wada ,  Kazumi Wada ,  Takahisa Ohno

IPC分类号： H01L29/205 ,  H01L29/161

CPC分类号： H01L29/205

摘要： The semiconductor device has a semiconductor substrate composed essentially of a III-V compound semiconductor containing Ga and As, and a surface layer structure provided on the semiconductor substrate and this layer has a composition different from that of the semiconductor substrate. The surface layer structure includes a strained layer epitaxially grown on the surface of the semiconductor substrate and composed essentially of at least one-element selected from the group consisting of indium, gallium, aluminum and boron, and at least one element selected from the group consisting of arsenic and phosphorus. The strained layer has a composition different from that of the semiconductor substrate The strained layer has a valence band maximum lower in energy than that of the valence band maximum of the semiconductor substrate.

摘要翻译： 半导体器件具有基本上由包含Ga和As的III-V族化合物半导体构成的半导体衬底以及设置在半导体衬底上的表面层结构，该层具有不同于半导体衬底的组成。 表面层结构包括外延生长在半导体衬底的表面上并且基本上由选自铟，镓，铝和硼的至少一种元素组成的应变层，以及至少一种选自以下的元素： 的砷和磷。 应变层具有与半导体衬底的组成不同的组成。应变层具有与半导体衬底的价带最大值的能量最低的价带。