发明申请
- 专利标题： METHODS OF THIN FILM PROCESS
- 专利标题（中）： 薄膜工艺方法
-
申请号： US13039724申请日： 2011-03-03
-
公开(公告)号： US20110151676A1公开(公告)日： 2011-06-23
- 发明人: Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
- 申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
信息查询
IPC分类:
