发明申请
- 专利标题： PLASMA PROCESSOR AND PLASMA PROCESSING METHOD
- 专利标题（中）： 等离子体处理器和等离子体处理方法
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申请号： US13242851申请日： 2011-09-23
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公开(公告)号： US20120006492A1公开(公告)日： 2012-01-12
- 发明人: Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
- 申请人： Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-210035 20010710; JP2001-216424 20010717; JP2002-068423 20020313
- 主分类号： C23F1/08
- IPC分类号： C23F1/08
摘要：
An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
公开/授权文献
- US08387562B2 Plasma processor and plasma processing method 公开/授权日：2013-03-05
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