公开(公告)号：US08387562B2

公开(公告)日：2013-03-05

申请号：US13242851

申请日：2011-09-23

申请人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20120006492A1

公开(公告)日：2012-01-12

申请号：US13242851

申请日：2011-09-23

申请人： Akihiro KIKUCHI ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro KIKUCHI ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23F1/08

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US08056503B2

公开(公告)日：2011-11-15

申请号：US10483251

申请日：2002-07-02

申请人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20080142160A1

公开(公告)日：2008-06-19

申请号：US11954832

申请日：2007-12-12

申请人： Takehiro UEDA ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

发明人： Takehiro UEDA ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

IPC分类号： H01L21/3065 ,  B21D53/00 ,  C23C16/40 ,  C23C16/458

CPC分类号： B32B38/08 ,  B32B38/10 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  Y10T29/49359 ,  Y10T29/494 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T279/23

摘要： A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.

摘要翻译： 基板安装台包括：板状部件，其设置有用于在其上安装基板的安装表面;多个气体注入开口，其在安装面上开口以朝向安装表面供应气体;以及气体供应通道，用于通过 气体注入口; 以及覆盖安装表面的热喷涂陶瓷层。 气体供给通道的至少内壁部分形成为曲面形状，内壁部分面对气体注入开口。

公开(公告)号：USD553104S1

公开(公告)日：2007-10-16

申请号：US29215644

申请日：2004-10-19

申请人： Kaoru Oohashi ,  Shunsuke Mizukami ,  Takehiro Ueda

设计人： Kaoru Oohashi ,  Shunsuke Mizukami ,  Takehiro Ueda

公开(公告)号：US20080098833A1

公开(公告)日：2008-05-01

申请号：US11925158

申请日：2007-10-26

申请人： Yasuharu Sasaki ,  Takehiro Ueda ,  Taketoshi Okajo ,  Kaoru Oohashi

发明人： Yasuharu Sasaki ,  Takehiro Ueda ,  Taketoshi Okajo ,  Kaoru Oohashi

IPC分类号： G01R31/02 ,  H01L21/683

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  H01L21/68757

摘要： An apparatus evaluates a substrate mounting device adapted to hold a target substrate placed on a mounting surface and to control a temperature of the target substrate. The apparatus includes an evacuatable airtightly sealed chamber accommodating therein the substrate mounting device, a heat source, arranged in a facing relationship with the mounting surface, for irradiating infrared light. The apparatus further includes an evaluation-purpose substrate adapted to be mounted on the mounting surface in place of the target substrate, the evaluation-purpose substrate being made of an infrared light absorbing material, and having a unit for measuring temperatures at plural sites on a surface and/or inside of the substrate.

摘要翻译： 一种装置评价适于保持放置在安装表面上的目标基板并控制目标基板的温度的基板安装装置。 该装置包括可抽出的气密密封室，其容纳基板安装装置，以与安装表面相对的关系布置的用于照射红外光的热源。 该装置还包括适于安装在安装表面上以代替目标基板的评估用基板，评估用基板由红外光吸收材料制成，并且具有用于测量在多个位置上的温度的单元 表面和/或内部。

公开(公告)号：US08573836B2

公开(公告)日：2013-11-05

申请号：US11925158

申请日：2007-10-26

申请人： Yasuharu Sasaki ,  Takehiro Ueda ,  Taketoshi Okajo ,  Kaoru Oohashi

发明人： Yasuharu Sasaki ,  Takehiro Ueda ,  Taketoshi Okajo ,  Kaoru Oohashi

IPC分类号： G01N17/00 ,  H01L21/00

CPC分类号： H01L21/67248 ,  H01L21/6831 ,  H01L21/68757

摘要： An apparatus evaluates a substrate mounting device adapted to hold a target substrate placed on a mounting surface and to control a temperature of the target substrate. The apparatus includes an evacuatable airtightly sealed chamber accommodating therein the substrate mounting device, a heat source, arranged in a facing relationship with the mounting surface, for irradiating infrared light. The apparatus further includes an evaluation-purpose substrate adapted to be mounted on the mounting surface in place of the target substrate, the evaluation-purpose substrate being made of an infrared light absorbing material, and having a unit for measuring temperatures at plural sites on a surface and/or inside of the substrate.

摘要翻译： 一种装置评价适于保持放置在安装表面上的目标基板并控制目标基板的温度的基板安装装置。 该装置包括可抽出的气密密封室，其容纳基板安装装置，以与安装表面相对的关系布置的用于照射红外光的热源。 该装置还包括适于安装在安装表面上以代替目标基板的评估用基板，评估用基板由红外光吸收材料制成，并且具有用于测量在多个位置上的温度的单元 表面和/或内部。

公开(公告)号：US08491752B2

公开(公告)日：2013-07-23

申请号：US11954832

申请日：2007-12-12

申请人： Takehiro Ueda ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

发明人： Takehiro Ueda ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683

CPC分类号： B32B38/08 ,  B32B38/10 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  Y10T29/49359 ,  Y10T29/494 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T279/23

摘要： A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.

摘要翻译： 基板安装台包括：板状部件，其设置有用于在其上安装基板的安装表面;多个气体注入开口，其在安装面上开口以朝向安装表面供应气体;以及气体供应通道，用于通过 气体注入口; 以及覆盖安装表面的热喷涂陶瓷层。 气体供给通道的至少内壁部分形成为曲面形状，内壁部分面对气体注入开口。

公开(公告)号：US20080145556A1

公开(公告)日：2008-06-19

申请号：US11954826

申请日：2007-12-12

申请人： Nobuyuki NAGAYAMA ,  Takehiro Ueda ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

发明人： Nobuyuki NAGAYAMA ,  Takehiro Ueda ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

IPC分类号： B05D1/08

CPC分类号： C23C16/4581 ,  C23C4/01 ,  C23C4/02 ,  C23C16/4404 ,  C23C16/46 ,  C23C16/466

摘要： A method for manufacturing a substrate mounting table having a mounting surface for mounting a substrate thereon; a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface; a gas supply channel for supplying a gas to the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface is provided. The method includes forming a removable film at least on inner wall portions of the gas supply channel facing the gas injection openings; forming the thermally sprayed ceramic layer on the mounting surface; and removing the film.

摘要翻译： 一种用于制造具有用于在其上安装基板的安装表面的基板安装台的方法; 多个气体注入口，其在所述安装面上开口，向所述安装面供给气体; 用于向气体注入口供给气体的气体供给通道; 并且提供覆盖安装表面的热喷涂陶瓷层。 该方法包括至少在面向气体注入开口的气体供应通道的内壁部分上形成可移除膜; 在所述安装表面上形成所述热喷涂陶瓷层; 并去除胶片。

公开(公告)号：US4591185A

公开(公告)日：1986-05-27

申请号：US665066

申请日：1984-10-26

申请人： Kazuyuki Natsume ,  Kaoru Oohashi

发明人： Kazuyuki Natsume ,  Kaoru Oohashi

IPC分类号： B60G17/00 ,  B60G17/015 ,  B60G17/016

CPC分类号： B60G17/016 ,  B60G2204/80 ,  B60G2400/252 ,  B60G2400/50 ,  B60G2401/14 ,  B60G2500/30 ,  B60G2600/02 ,  B60G2600/26

摘要： A vehicle height control system includes a plurality of vehicle height adjusters actuated by a hydropneumatic actuating system and controlled respectively by control signals from a control unit. The control unit calculates, for each of the vehicle height adjusters, a target difference between a target adjustment position and an actual position detected by a vehicle height sensor associated with the adjuster. A maximum target difference is selected from the target differences respectively for the adjusters, and the selected maximum target difference is divided by a predetermined adjusting unit to determine a number of steps for adjustment of the target difference a little amount at a time. Then, tentative- or pseudo-target adjustment positions ranging between the actual position and the target adjustment position are obtained for each adjuster, and the adjustment control of each adjuster is carried out to achieve the pseudo target adjustment positions step by step.

摘要翻译： 车辆高度控制系统包括由液压气动致动系统致动并由控制单元的控制信号分别控制的多个车高调节器。 对于每个车高调节器，控制单元计算目标调整位置与由调节器相关联的车辆高度传感器检测到的实际位置之间的目标差。 从调节器的目标差异中选择最大目标差，并且将所选择的最大目标差除以预定的调整单元，以确定用于一次调整目标差的步数。 然后，针对每个调节器获得实际位置和目标调整位置之间的临时或伪目标调整位置，并且执行每个调节器的调整控制以逐步实现伪目标调整位置。