发明申请
- 专利标题： REMOVING METHOD OF A HARD MASK
- 专利标题（中）： 硬掩模的拆卸方法
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申请号： US12883233申请日： 2010-09-16
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公开(公告)号： US20120070952A1公开(公告)日： 2012-03-22
- 发明人: Che-Hua HSU , Shao- Hua Hsu , Zhi-Cheng Lee , Cheng-Guo Chen , Shin-Chi Chen , Hung-Ling Shih , Hung-Yi Wu , Heng-Ching Huang
- 申请人： Che-Hua HSU , Shao- Hua Hsu , Zhi-Cheng Lee , Cheng-Guo Chen , Shin-Chi Chen , Hung-Ling Shih , Hung-Yi Wu , Heng-Ching Huang
- 申请人地址： TW Hsinchu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.
公开/授权文献
- US08232152B2 Removing method of a hard mask 公开/授权日：2012-07-31