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公开(公告)号:US20120070952A1
公开(公告)日:2012-03-22
申请号:US12883233
申请日:2010-09-16
申请人: Che-Hua HSU , Shao- Hua Hsu , Zhi-Cheng Lee , Cheng-Guo Chen , Shin-Chi Chen , Hung-Ling Shih , Hung-Yi Wu , Heng-Ching Huang
发明人: Che-Hua HSU , Shao- Hua Hsu , Zhi-Cheng Lee , Cheng-Guo Chen , Shin-Chi Chen , Hung-Ling Shih , Hung-Yi Wu , Heng-Ching Huang
IPC分类号: H01L21/336
CPC分类号: H01L29/66545 , H01L21/823456 , H01L21/823468 , H01L29/6656
摘要: A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.
摘要翻译: 硬掩模的去除方法包括以下步骤。 提供基板。 在衬底上形成至少两个MOSFET。 在衬底中形成隔离结构,并且位于至少两个MOSFET之间。 MOSEFT中的每一个在栅极上包括栅极绝缘层,栅极,间隔物和硬掩模。 在隔离结构上形成保护结构,从保护结构露出硬掩模。 暴露的硬掩模被移除以露出门。
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公开(公告)号:US08232152B2
公开(公告)日:2012-07-31
申请号:US12883233
申请日:2010-09-16
申请人: Che-Hua Hsu , Shao-Hua Hsu , Zhi-Cheng Lee , Cheng-Guo Chen , Shin-Chi Chen , Hung-Ling Shih , Hung-Yi Wu , Heng-Ching Huang
发明人: Che-Hua Hsu , Shao-Hua Hsu , Zhi-Cheng Lee , Cheng-Guo Chen , Shin-Chi Chen , Hung-Ling Shih , Hung-Yi Wu , Heng-Ching Huang
IPC分类号: H01L21/336
CPC分类号: H01L29/66545 , H01L21/823456 , H01L21/823468 , H01L29/6656
摘要: A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.
摘要翻译: 硬掩模的去除方法包括以下步骤。 提供基板。 在衬底上形成至少两个MOSFET。 在衬底中形成隔离结构,并且位于至少两个MOSFET之间。 MOSEFT中的每一个在栅极上包括栅极绝缘层,栅极,间隔物和硬掩模。 在隔离结构上形成保护结构,从保护结构露出硬掩模。 暴露的硬掩模被移除以露出门。
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