公开(公告)号：US20120070952A1

公开(公告)日：2012-03-22

申请号：US12883233

申请日：2010-09-16

申请人： Che-Hua HSU ,  Shao- Hua Hsu ,  Zhi-Cheng Lee ,  Cheng-Guo Chen ,  Shin-Chi Chen ,  Hung-Ling Shih ,  Hung-Yi Wu ,  Heng-Ching Huang

发明人： Che-Hua HSU ,  Shao- Hua Hsu ,  Zhi-Cheng Lee ,  Cheng-Guo Chen ,  Shin-Chi Chen ,  Hung-Ling Shih ,  Hung-Yi Wu ,  Heng-Ching Huang

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/823456 ,  H01L21/823468 ,  H01L29/6656

摘要： A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.

摘要翻译： 硬掩模的去除方法包括以下步骤。 提供基板。 在衬底上形成至少两个MOSFET。 在衬底中形成隔离结构，并且位于至少两个MOSFET之间。 MOSEFT中的每一个在栅极上包括栅极绝缘层，栅极，间隔物和硬掩模。 在隔离结构上形成保护结构，从保护结构露出硬掩模。 暴露的硬掩模被移除以露出门。

公开(公告)号：US20120309185A1

公开(公告)日：2012-12-06

申请号：US13586874

申请日：2012-08-16

申请人： Che-Hua HSU ,  Shao-Hua HSU ,  Zhi-Cheng LEE ,  Cheng-Guo CHEN

发明人： Che-Hua HSU ,  Shao-Hua HSU ,  Zhi-Cheng LEE ,  Cheng-Guo CHEN

IPC分类号： H01L21/28

CPC分类号： H01L21/823807 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834

摘要： A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

摘要翻译： 一种形成金属栅极结构的方法包括提供衬底; 形成层叠在基板上的栅介质层，材料层和多晶硅层; 在所述多晶硅层上形成第一掩模层，第二掩模层和图案化光刻胶; 通过利用图案化的光致抗蚀剂作为蚀刻掩模去除第二掩模层和第一掩模层的部分以形成硬掩模; 去除图案化的光致抗蚀剂，接着利用硬掩模作为蚀刻掩模去除部分多晶硅层和材料层的部分。 因此，形成栅堆叠。 由于在形成栅极叠层之前去除图案化的光致抗蚀剂，所以保护栅极堆叠免受光致抗蚀剂去除工艺的损害。 光致抗蚀剂去除工艺不会侵蚀栅极堆叠的侧壁，因此防止栅极电介质层的鸟喙效应。