发明申请
- 专利标题： Structures And Techniques For Atomic Layer Deposition
- 专利标题（中）： 原子层沉积的结构和技术
-
申请号： US12890051申请日： 2010-09-24
-
公开(公告)号： US20120074533A1公开(公告)日： 2012-03-29
- 发明人: Shintaro Aoyama , Robert D. Clark , Steven P. Consiglio , Marinus Hopstaken , Hemanth Jagannathan , Paul Charles Jamison , Gert Leusink , Barry Paul Linder , Vijay Narayanan , Cory Wajda
- 申请人： Shintaro Aoyama , Robert D. Clark , Steven P. Consiglio , Marinus Hopstaken , Hemanth Jagannathan , Paul Charles Jamison , Gert Leusink , Barry Paul Linder , Vijay Narayanan , Cory Wajda
- 申请人地址： JP Tokyo US NY Armonk
- 专利权人： Tokyo Electron (TEL)Limited,International Business Machines Corporation
- 当前专利权人： Tokyo Electron (TEL)Limited,International Business Machines Corporation
- 当前专利权人地址： JP Tokyo US NY Armonk
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; B32B15/04 ; B05D5/12
摘要：
In one exemplary embodiment, a method includes: forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition; thereafter, annealing the formed at least one first monolayer of first material under a first inert atmosphere at a first temperature between about 650° C. and about 900° C.; thereafter, forming at least one second monolayer of second material by performing a second plurality of cycles of atomic layer deposition, where the formed at least one second monolayer of second material at least partially overlies the annealed at least one first monolayer of first material; and thereafter, annealing the formed at least one second monolayer of second material under a second inert atmosphere at a second temperature between about 650° C. and about 900° C.
公开/授权文献
- US08722548B2 Structures and techniques for atomic layer deposition 公开/授权日：2014-05-13