公开(公告)号：US08722548B2

公开(公告)日：2014-05-13

申请号：US12890051

申请日：2010-09-24

申请人： Shintaro Aoyama ,  Robert D. Clark ,  Steven P. Consiglio ,  Marinus Hopstaken ,  Hemanth Jagannathan ,  Paul Charles Jamison ,  Gert Leusink ,  Barry Paul Linder ,  Vijay Narayanan ,  Cory Wajda

发明人： Shintaro Aoyama ,  Robert D. Clark ,  Steven P. Consiglio ,  Marinus Hopstaken ,  Hemanth Jagannathan ,  Paul Charles Jamison ,  Gert Leusink ,  Barry Paul Linder ,  Vijay Narayanan ,  Cory Wajda

IPC分类号： H01L21/469

CPC分类号： H01L21/02181 ,  B32B15/04 ,  B32B2457/14 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/28194 ,  H01L29/517

摘要： In one exemplary embodiment, a method includes: forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition; thereafter, annealing the formed at least one first monolayer of first material under a first inert atmosphere at a first temperature between about 650° C. and about 900° C.; thereafter, forming at least one second monolayer of second material by performing a second plurality of cycles of atomic layer deposition, where the formed at least one second monolayer of second material at least partially overlies the annealed at least one first monolayer of first material; and thereafter, annealing the formed at least one second monolayer of second material under a second inert atmosphere at a second temperature between about 650° C. and about 900° C.

摘要翻译： 在一个示例性实施例中，一种方法包括：通过执行原子层沉积的第一多个循环，在衬底的表面上形成至少一个第一材料的第一单层; 之后，在第一惰性气氛下，在约650℃至约900℃的第一温度下退火所形成的至少一个第一材料的第一单层; 此后，通过执行第二多个原子层沉积循环形成第二材料的至少一个第二单层，其中所形成的至少一个第二单层的第二材料至少部分地覆盖所述退火的至少一个第一单层第一材料; 然后在第二惰性气氛下，在约650℃和约900℃之间的第二温度下对所形成的至少一个第二单层第二材料进行退火。

公开(公告)号：US20120074533A1

公开(公告)日：2012-03-29

申请号：US12890051

申请日：2010-09-24

申请人： Shintaro Aoyama ,  Robert D. Clark ,  Steven P. Consiglio ,  Marinus Hopstaken ,  Hemanth Jagannathan ,  Paul Charles Jamison ,  Gert Leusink ,  Barry Paul Linder ,  Vijay Narayanan ,  Cory Wajda

发明人： Shintaro Aoyama ,  Robert D. Clark ,  Steven P. Consiglio ,  Marinus Hopstaken ,  Hemanth Jagannathan ,  Paul Charles Jamison ,  Gert Leusink ,  Barry Paul Linder ,  Vijay Narayanan ,  Cory Wajda

IPC分类号： H01L29/51 ,  B32B15/04 ,  B05D5/12

CPC分类号： H01L21/02181 ,  B32B15/04 ,  B32B2457/14 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/28194 ,  H01L29/517

摘要： In one exemplary embodiment, a method includes: forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition; thereafter, annealing the formed at least one first monolayer of first material under a first inert atmosphere at a first temperature between about 650° C. and about 900° C.; thereafter, forming at least one second monolayer of second material by performing a second plurality of cycles of atomic layer deposition, where the formed at least one second monolayer of second material at least partially overlies the annealed at least one first monolayer of first material; and thereafter, annealing the formed at least one second monolayer of second material under a second inert atmosphere at a second temperature between about 650° C. and about 900° C.

摘要翻译： 在一个示例性实施例中，一种方法包括：通过执行原子层沉积的第一多个循环，在衬底的表面上形成至少一个第一材料的第一单层; 之后，在第一惰性气氛下，在约650℃至约900℃的第一温度下退火所形成的至少一个第一材料的第一单层; 此后，通过执行第二多个原子层沉积循环形成第二材料的至少一个第二单层，其中所形成的至少一个第二单层的第二材料至少部分地覆盖所述退火的至少一个第一单层第一材料; 然后在第二惰性气氛下，在约650℃和约900℃之间的第二温度下对所形成的至少一个第二单层第二材料进行退火。

公开(公告)号：US07964515B2

公开(公告)日：2011-06-21

申请号：US11963150

申请日：2007-12-21

申请人： Robert D. Clark ,  Cory Wajda

发明人： Robert D. Clark ,  Cory Wajda

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/3141 ,  C23C16/30 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

摘要： A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.

摘要翻译： 提供一种用于形成用于半导体器件的高介电常数（高k）膜的方法。 根据一个实施方案，通过交替地和顺序地将基底暴露于金属 - 碳前体和含有臭氧的氧化源的近饱和暴露水平来沉积金属 - 碳 - 氧高k膜。 该方法能够形成具有良好厚度均匀性的金属 - 碳 - 氧高k膜，同时阻碍金属 - 碳 - 氧高k膜和衬底之间的界面层的生长。 根据一个实施例，金属 - 碳 - 氧高k膜可以用氧化工艺处理以从膜去除碳。

公开(公告)号：US20130115721A1

公开(公告)日：2013-05-09

申请号：US13487878

申请日：2012-06-04

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/8238 ,  H01L21/66

CPC分类号： H01L21/823431 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L21/31116

摘要： A method of fabricating a semiconductor device. A substrate is provided and includes a dielectric layer and a mask layer, which is patterned and developed. A plurality of trenches is created within the dielectric material by a retrograde etching process. The plurality of trenches is subsequently overfilled with a material by heteroepitaxial growth with aspect ratio trapping. The material includes at least one of germanium, a Group III-V compound, or a combination of two or more thereof. The overfilled plurality of trenches is then planarized.

摘要翻译： 一种制造半导体器件的方法。 提供了一种衬底，其包括被图案化和显影的电介质层和掩模层。 通过逆向蚀刻工艺在电介质材料内产生多个沟槽。 多个沟槽随后通过具有纵横比捕获的异质外延生长而用材料过度填充。 该材料包括锗，III-V族化合物或其两种或更多种的组合中的至少一种。 然后将过满的多个沟槽平坦化。

公开(公告)号：US07939455B2

公开(公告)日：2011-05-10

申请号：US11529380

申请日：2006-09-29

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3185 ,  H01L21/76829 ,  H01L29/7843

摘要： A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor. The substrate is exposed to a gas including a first nitrogen precursor configured to react with the silicon precursor with a first reactivity characteristic. The substrate is also exposed to a gas including a second nitrogen precursor configured to react with the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide a strained SiN film. According to another embodiment, the substrate is exposed to a gas pulse containing a silicon precursor and first and second nitrogen precursors, wherein the ratio of the first and second precursors is varied during the exposure.

摘要翻译： 形成应变SiN膜的方法和包含应变SiN膜的半导体器件。 该方法包括将衬底暴露于包括硅前体的气体。 将衬底暴露于包括配置为与第一反应特性与硅前体反应的第一氮前体的气体。 衬底还暴露于包括配置为与硅前体反应的第二氮前体的气体，其具有与第一反应特性不同的第二反应特性，使得在衬底上形成的SiN膜的性质改变以提供应变SiN膜 。 根据另一个实施方案，将衬底暴露于包含硅前体和第一和第二氮前体的气体脉冲，其中第一和第二前体的比例在曝光期间变化。

公开(公告)号：US20100261342A1

公开(公告)日：2010-10-14

申请号：US12823541

申请日：2010-06-25

申请人： Robert D. Clark ,  Gerrit J. Leusink

发明人： Robert D. Clark ,  Gerrit J. Leusink

IPC分类号： H01L21/28

CPC分类号： H01L21/3141 ,  H01L29/1033 ,  H01L29/513 ,  H01L29/517

摘要： A method is provided for forming a semiconductor device containing a buried threshold voltage adjustment layer. The method includes providing a substrate containing an interface layer, depositing a first high-k film on the interface layer, depositing a threshold voltage adjustment layer on the first high-k film, and depositing a second high-k film on the threshold voltage adjustment layer such that the threshold voltage adjustment layer is interposed between the first and second high-k films. The semiconductor device containing a patterned gate stack is described.

摘要翻译： 提供一种用于形成包含掩埋阈值电压调节层的半导体器件的方法。 该方法包括提供包含界面层的衬底，在界面层上沉积第一高k膜，在第一高k膜上沉积阈值电压调节层，以及在阈值电压调节上沉积第二高k膜 使得阈值电压调整层插入在第一和第二高k膜之间。 描述了包含图案化栅极堆叠的半导体器件。

公开(公告)号：US20080081470A1

公开(公告)日：2008-04-03

申请号：US11529380

申请日：2006-09-29

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L21/44

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45527 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3185 ,  H01L21/76829 ,  H01L29/7843

摘要： A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor. The substrate is exposed to a gas including a first nitrogen precursor configured to react with the silicon precursor with a first reactivity characteristic. The substrate is also exposed to a gas including a second nitrogen precursor configured to react with the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide a strained SiN film. According to another embodiment, the substrate is exposed to a gas pulse containing a silicon precursor and first and second nitrogen precursors, wherein the ratio of the first and second precursors is varied during the exposure.

摘要翻译： 形成应变SiN膜的方法和包含应变SiN膜的半导体器件。 该方法包括将衬底暴露于包括硅前体的气体。 将衬底暴露于包括配置为与第一反应特性与硅前体反应的第一氮前体的气体。 衬底还暴露于包括配置为与硅前体反应的第二氮前体的气体，其具有与第一反应特性不同的第二反应特性，使得在衬底上形成的SiN膜的性质改变以提供应变SiN膜 。 根据另一个实施方案，将衬底暴露于包含硅前体和第一和第二氮前体的气体脉冲，其中第一和第二前体的比例在曝光期间变化。

公开(公告)号：US20080079111A1

公开(公告)日：2008-04-03

申请号：US11537492

申请日：2006-09-29

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： H01L29/00

CPC分类号： H01L29/518 ,  C23C16/308 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/3162 ,  H01L21/31645 ,  H01L29/78

摘要： A semiconductor device containing a substrate, a nitrided high-k film on the substrate, where the nitrided high-k film contains an oxygen-containing film, and a nitrogen-containing film that is oxidized through at least a portion of the thickness thereof. The nitrogen-containing film and the oxygen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table. According to one embodiment, the high-k film can optionally further contain aluminum, silicon, or aluminum and silicon. The semiconductor device can contain a transistor, a deep trench capacitor, or a stacked capacitor.

摘要翻译： 包含衬底的半导体器件，衬底上的氮化高k膜，其中氮化高k膜含有含氧膜，以及通过其厚度的至少一部分被氧化的含氮膜。 含氮膜和含氧膜含有相同的一种或多种选自碱土金属元素，稀土元素和元素周期表IVB族元素的金属元素。 根据一个实施例，高k膜可任选地进一步包含铝，硅或铝和硅。 半导体器件可以包含晶体管，深沟槽电容器或堆叠电容器。

公开(公告)号：US06535819B1

公开(公告)日：2003-03-18

申请号：US09059017

申请日：1998-04-13

申请人： Robert D. Clark

发明人： Robert D. Clark

IPC分类号： G06F1900

CPC分类号： G06K9/6219 ,  G06F19/707

摘要： The method of this invention identifies distinctive items of information from a larger body of information on the basis of similarities or dissimilarities among the items and achieves a significant increase in speed as well as the ability to balance the representativeness and diversity among the identified items by applying selection criteria to randomly chosen subsamples of all the information. The method is illustrated with reference to the compound selection requirements of medicinal chemists. Compound selection methods currently available to chemists are based on maximum or minimum dissimilarity selection or on hierarchical clustering. The method of the invention is more general and incorporates maximum and minimum dissimilarity-based selection as special cases. In addition, the number of iterations required to select the items is a multiple of the group size which, at its greatest, is approximately the square root of the population size. Thus, the selection method runs much faster than the methods of the prior art. Further, by adjusting the subsample size parameter K, it is possible to control the balance between representativeness and diversity in the compounds selected. In addition, the method can mimic the distributional properties of selections based on hierarchical clustering and, at least in some cases, improve upon them.

摘要翻译： 本发明的方法基于各项目之间的相似性或不相似性，从更大量的信息中识别信息的特征，并通过应用来实现速度的显着提高以及平衡所识别的项目之间的代表性和多样性的能力 所有信息的随机选择子样本的选择标准。 该方法参照药物化学家的化合物选择要求进行说明。 化学家目前可用的化合物选择方法是基于最大或最小不相似选择或层级聚类。 本发明的方法更一般，并且将特定情况下的最大和最小不相似的选择结合起来。 此外，选择项目所需的迭代次数是群体大小的倍数，其大小最大，为群体大小的平方根。 因此，选择方法比现有技术的方法运行得快得多。 此外，通过调整子样本大小参数K，可以控制所选化合物的代表性和多样性之间的平衡。 此外，该方法可以模仿基于分层聚类的选择的分布属性，并且至少在某些情况下可以改进它们。

公开(公告)号：US06185506B2

公开(公告)日：2001-02-06

申请号：US08592132

申请日：1996-01-26

申请人： Richard D. Cramer ,  David E. Patterson ,  Robert D. Clark ,  Allan M. Ferguson

发明人： Richard D. Cramer ,  David E. Patterson ,  Robert D. Clark ,  Allan M. Ferguson

IPC分类号： G06F1700

CPC分类号： C40B50/02 ,  B01J2219/007 ,  C40B30/02 ,  G06F19/704 ,  Y10S707/99943

摘要： The use of biological screening purposes of a subset (library) of a large combinatorially accessible chemical universe increases the efficiency of the screening process only if the subset contains members representative of the total diversity of the universe. In order to insure inclusion in the subset of molecules representing the total diversity of the universe under consideration, valid molecular descriptors which quantitatively reflect the diversity of the molecules in the universe are required. A unique validation method is used to examine both a new three dimensional steric metric and some prior art metrics. With this method, the relative usefulness/validity of individual metrics can be ascertained from their application to randomly selected literature data sets. By the appropriate application of validated metrics, the method of this invention selects a subset of a combinatorial accessible chemical universe such that the molecules of the subset are representative of all the diversity present in the universe and yet do not contain multiple members which represent the same diversity (oversample). The use of the neighborhood definition of a validated metric may also be used to combine (without oversampling the same diversity) any number of combinatorial screening libraries.

摘要翻译： 只有当子集包含代表宇宙总体多样性的成员时，才能使用大型组合可访问化学宇宙的子集（库）的生物筛选目的来提高筛选过程的效率。 为了确保包含在表示所考虑的宇宙总体多样性的分子子集中，需要定量反映宇宙中分子多样性的有效分子描述符。 一种独特的验证方法用于检查新的三维空间度量和一些现有技术的度量。 使用这种方法，可以从其应用于随机选择的文献数据集中确定各个度量的相对有用性/有效性。 通过适当应用经验证的度量，本发明的方法选择组合可访问化学宇宙的子集，使得该子集的分子代表存在于宇宙中的所有分集，但不包含表示相同的多个成员 多样性（过度抽样）。 使用验证度量的邻域定义也可以用于组合（不过采样相同的多样性）任意数量的组合筛选库。