发明申请
- 专利标题： SEMICONDUCTOR FILM, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体膜，半导体元件，半导体器件及其制造方法
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申请号： US13303543申请日： 2011-11-23
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公开(公告)号： US20120132907A1公开(公告)日： 2012-05-31
- 发明人: Shunpei Yamazaki , Masahiro Takahashi , Tetsunori Maruyama
- 申请人： Shunpei Yamazaki , Masahiro Takahashi , Tetsunori Maruyama
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2010-267924 20101130
- 主分类号： H01L29/22
- IPC分类号： H01L29/22 ; H01L21/34
摘要：
One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.
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