公开(公告)号：US20120132907A1

公开(公告)日：2012-05-31

申请号：US13303543

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L29/22 ,  H01L21/34

CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/78681

摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。

公开(公告)号：US08809852B2

公开(公告)日：2014-08-19

申请号：US13303543

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/78681

摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。

公开(公告)号：US08728883B2

公开(公告)日：2014-05-20

申请号：US13297474

申请日：2011-11-16

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L21/84 ,  H01L29/66

CPC分类号： H01L29/06 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

摘要翻译： 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。

公开(公告)号：US08809841B2

公开(公告)日：2014-08-19

申请号：US13303637

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

IPC分类号： H01L51/50

CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016 ,  H01L51/506 ,  H01L51/5203 ,  H01L2251/558

摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。

公开(公告)号：US08319218B2

公开(公告)日：2012-11-27

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。

公开(公告)号：US20120126212A1

公开(公告)日：2012-05-24

申请号：US13303637

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

IPC分类号： H01L27/32 ,  H01L51/52

CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016 ,  H01L51/506 ,  H01L51/5203 ,  H01L2251/558

摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。

公开(公告)号：US20110084267A1

公开(公告)日：2011-04-14

申请号：US12898357

申请日：2010-10-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC分类号： H01L29/12 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

摘要翻译： 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

公开(公告)号：US09034104B2

公开(公告)日：2015-05-19

申请号：US12968367

申请日：2010-12-15

申请人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

IPC分类号： C30B1/02 ,  H01L21/02 ,  H01L29/04 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869

摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

摘要翻译： 可以使用更大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在基板上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值，优选550℃至750℃）进行热处理，从表面向内部进行晶体生长，从而包括单组分氧化物半导体层 形成单晶区; 并且包括单晶区域的多成分氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

公开(公告)号：US08766250B2

公开(公告)日：2014-07-01

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US08686425B2

公开(公告)日：2014-04-01

申请号：US13584840

申请日：2012-08-14

申请人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

IPC分类号： H01L31/112 ,  H01L21/00

CPC分类号： H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

摘要翻译： 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。