公开(公告)号：US20120132907A1

公开(公告)日：2012-05-31

申请号：US13303543

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L29/22 ,  H01L21/34

CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/78681

摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。

公开(公告)号：US08809852B2

公开(公告)日：2014-08-19

申请号：US13303543

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/78681

摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。

公开(公告)号：US08728883B2

公开(公告)日：2014-05-20

申请号：US13297474

申请日：2011-11-16

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L21/84 ,  H01L29/66

CPC分类号： H01L29/06 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

摘要翻译： 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。

公开(公告)号：US08828794B2

公开(公告)日：2014-09-09

申请号：US13413684

申请日：2012-03-07

申请人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

IPC分类号： H01L21/42 ,  H01L21/84 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

公开(公告)号：US20120325650A1

公开(公告)日：2012-12-27

申请号：US13603502

申请日：2012-09-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US08338827B2

公开(公告)日：2012-12-25

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L29/10

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US08748223B2

公开(公告)日：2014-06-10

申请号：US12888846

申请日：2010-09-23

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

公开(公告)号：US09382611B2

公开(公告)日：2016-07-05

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： B28B1/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US09260779B2

公开(公告)日：2016-02-16

申请号：US12781894

申请日：2010-05-18

申请人： Junichi Koezuka ,  Tetsunori Maruyama ,  Takayuki Saito ,  Yuki Imoto ,  Noriaki Uto ,  Yuta Endo ,  Hitomi Shionoya ,  Takuya Hirohashi ,  Shunpei Yamazaki

发明人： Junichi Koezuka ,  Tetsunori Maruyama ,  Takayuki Saito ,  Yuki Imoto ,  Noriaki Uto ,  Yuta Endo ,  Hitomi Shionoya ,  Takuya Hirohashi ,  Shunpei Yamazaki

IPC分类号： C23C14/08 ,  C23C14/34 ,  C23C14/06 ,  C23C14/58 ,  C23C14/54

CPC分类号： H01B1/02 ,  C23C14/0676 ,  C23C14/3414 ,  C23C14/541 ,  C23C14/5806

摘要： An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

摘要翻译： 本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。 另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。 另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。 当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。 在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

公开(公告)号：US08753928B2

公开(公告)日：2014-06-17

申请号：US13413686

申请日：2012-03-07

申请人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78693

摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

摘要翻译： 在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝 在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于 形成氧化物半导体层。