发明申请
US20120205620A1 METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
有权
制备半导体（Al，In，Ga，B）N基发光二极管的方法
- 专利标题： METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
- 专利标题（中）： 制备半导体（Al，In，Ga，B）N基发光二极管的方法
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申请号： US13405590申请日： 2012-02-27
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公开(公告)号： US20120205620A1公开(公告)日： 2012-08-16
- 发明人: Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L33/32
摘要：
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
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