发明申请
- 专利标题: Focused Ion Beam Device and Focused Ion Beam Processing Method
- 专利标题(中): 聚焦离子束装置和聚焦离子束加工方法
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申请号: US13513256申请日: 2010-11-15
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公开(公告)号: US20120235055A1公开(公告)日: 2012-09-20
- 发明人: Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
- 申请人: Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
- 申请人地址: JP Minato-ku, Tokyo
- 专利权人: Hitachi HIgh-Technologies Corporation
- 当前专利权人: Hitachi HIgh-Technologies Corporation
- 当前专利权人地址: JP Minato-ku, Tokyo
- 优先权: JP2009-278104 20091208
- 国际申请: PCT/JP2010/006684 WO 20101115
- 主分类号: H01J3/28
- IPC分类号: H01J3/28
摘要:
Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.