发明申请
US20130001699A1 TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AREA INTEGRATED WITH A MOSFET
审中-公开
具有与MOSFET集成的增强接触区的TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AREA
- 专利标题： TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AREA INTEGRATED WITH A MOSFET
- 专利标题（中）： 具有与MOSFET集成的增强接触区的TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AREA
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申请号： US13171475申请日： 2011-06-29
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公开(公告)号： US20130001699A1公开(公告)日： 2013-01-03
- 发明人: Sung-Shan Tai , Po-Hsien Li , Guo-Liang Yang , Shian Hau Liao
- 申请人： Sung-Shan Tai , Po-Hsien Li , Guo-Liang Yang , Shian Hau Liao
- 申请人地址： TW TAIWAN
- 专利权人： SINOPOWER SEMICONDUCTOR, INC.
- 当前专利权人： SINOPOWER SEMICONDUCTOR, INC.
- 当前专利权人地址： TW TAIWAN
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/283
摘要：
An object of this invention is to provide a Schottky diode structure to increase the contact area at a Schottky junction between the Schottky Barrier metal and a semiconductor substrate. The larger contact area of the Schottky junction is, the lower of the forward voltage drop across the Schottky diode will be, thereby improving the performance and efficiency of the Schottky diode.The present invention also discloses that a plurality of trenches with adjacent top mesas can be used to form a Schottky diode with even larger contact area, wherein the trenches are built using the isolation area between two cells of MOSFET with minimum extra overhead by shrinking the dimension of pitch between two trenches.