摘要:
An object of this invention is to provide a Schottky diode structure to increase the contact area at a Schottky junction between the Schottky Barrier metal and a semiconductor substrate. The larger contact area of the Schottky junction is, the lower of the forward voltage drop across the Schottky diode will be, thereby improving the performance and efficiency of the Schottky diode.The present invention also discloses that a plurality of trenches with adjacent top mesas can be used to form a Schottky diode with even larger contact area, wherein the trenches are built using the isolation area between two cells of MOSFET with minimum extra overhead by shrinking the dimension of pitch between two trenches.
摘要:
The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.
摘要:
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要:
The present invention provides a termination structure of a power semiconductor device and a manufacturing method thereof. The power semiconductor device has an active region and a termination region. The termination region surrounds the active region, and the termination structure is disposed in the termination region. The termination structure includes a semiconductor substrate, an insulating layer and a metal layer. The semiconductor substrate has a trench disposed in the termination region. The insulating layer is partially filled into the trench and covers the semiconductor substrate, and a top surface of the insulating layer has a hole. The metal layer is disposed on the insulating layer, and is filled into the hole.
摘要:
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
摘要:
A method of forming a contact opening in a semiconductor substrate is presented. A plurality of trench gates each having a projecting portion are formed in a semiconductor substrate, and a stop layer is deposited over the semiconductor substrate extending over the projecting portions, wherein each portion of the stop layer along each of the sidewalls of the projecting portions is covered by a spacer. By removing the portions of the stop layer not covered by the spacers by utilizing a relatively higher etching selectivity of the stop layer to the spacers, the openings between adjacent projecting portions with an L-type shape on each sidewall can be formed, and a lithography process can be performed to form self-aligned contact openings thereafter.
摘要:
A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall compatible with spin etch processes.
摘要:
A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall compatible with spin etch processes.
摘要:
This invention discloses an improved MOSFET devices manufactured with a trenched gate by forming the sidewalls of the trench on a (110) crystal orientation of a semiconductor substrate. The trench is covering with a dielectric oxide layer along the sidewalls and the bottom surface or the termination of the trench formed along different crystal orientations of the semiconductor substrate. Special manufacturing processes such as oxide annealing process, special mask or SOG processes are implemented to overcome the limitations of the non-uniform dielectric layer growth.
摘要:
A semiconductor device comprises a drain, a body in contact with the drain, the body having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a trench extending through the source and the body to the drain, and a gate disposed in the trench, having a gate top surface that extends substantially above the body top surface. A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate structure that extends substantially above the top substrate surface.