公开(公告)号：US20130001699A1

公开(公告)日：2013-01-03

申请号：US13171475

申请日：2011-06-29

申请人： Sung-Shan Tai ,  Po-Hsien Li ,  Guo-Liang Yang ,  Shian Hau Liao

发明人： Sung-Shan Tai ,  Po-Hsien Li ,  Guo-Liang Yang ,  Shian Hau Liao

IPC分类号： H01L27/06 ,  H01L21/283

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/41708 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/782 ,  H01L29/872

摘要： An object of this invention is to provide a Schottky diode structure to increase the contact area at a Schottky junction between the Schottky Barrier metal and a semiconductor substrate. The larger contact area of the Schottky junction is, the lower of the forward voltage drop across the Schottky diode will be, thereby improving the performance and efficiency of the Schottky diode.The present invention also discloses that a plurality of trenches with adjacent top mesas can be used to form a Schottky diode with even larger contact area, wherein the trenches are built using the isolation area between two cells of MOSFET with minimum extra overhead by shrinking the dimension of pitch between two trenches.

摘要翻译： 本发明的目的是提供一种肖特基二极管结构，以增加肖特基势垒金属与半导体衬底之间的肖特基结的接触面积。 肖特基结的接触面积越大，肖特基二极管的正向压降越低，从而提高肖特基二极管的性能和效率。 本发明还公开了具有相邻顶部台面的多个沟槽可用于形成具有甚至更大接触面积的肖特基二极管，其中使用MOSFET的两个单元之间的隔离区域构建沟槽，并以最小的额外开销来缩小尺寸 在两个沟槽之间的间距。