公开(公告)号：US20130001699A1

公开(公告)日：2013-01-03

申请号：US13171475

申请日：2011-06-29

申请人： Sung-Shan Tai ,  Po-Hsien Li ,  Guo-Liang Yang ,  Shian Hau Liao

发明人： Sung-Shan Tai ,  Po-Hsien Li ,  Guo-Liang Yang ,  Shian Hau Liao

IPC分类号： H01L27/06 ,  H01L21/283

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/41708 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/782 ,  H01L29/872

摘要： An object of this invention is to provide a Schottky diode structure to increase the contact area at a Schottky junction between the Schottky Barrier metal and a semiconductor substrate. The larger contact area of the Schottky junction is, the lower of the forward voltage drop across the Schottky diode will be, thereby improving the performance and efficiency of the Schottky diode.The present invention also discloses that a plurality of trenches with adjacent top mesas can be used to form a Schottky diode with even larger contact area, wherein the trenches are built using the isolation area between two cells of MOSFET with minimum extra overhead by shrinking the dimension of pitch between two trenches.

摘要翻译： 本发明的目的是提供一种肖特基二极管结构，以增加肖特基势垒金属与半导体衬底之间的肖特基结的接触面积。 肖特基结的接触面积越大，肖特基二极管的正向压降越低，从而提高肖特基二极管的性能和效率。 本发明还公开了具有相邻顶部台面的多个沟槽可用于形成具有甚至更大接触面积的肖特基二极管，其中使用MOSFET的两个单元之间的隔离区域构建沟槽，并以最小的额外开销来缩小尺寸 在两个沟槽之间的间距。

公开(公告)号：US08319284B2

公开(公告)日：2012-11-27

申请号：US12839426

申请日：2010-07-20

申请人： Wei-Chieh Lin ,  Ho-Tai Chen ,  Jia-Fu Lin ,  Po-Hsien Li

发明人： Wei-Chieh Lin ,  Ho-Tai Chen ,  Jia-Fu Lin ,  Po-Hsien Li

IPC分类号： H01L29/66

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7816 ,  H01L29/7835

摘要： A laterally diffused metal-oxide-semiconductor device includes a substrate, a gate dielectric layer, a gate polysilicon layer, a source region, a drain region, a body region, a first drain contact plug, a source polysilicon layer, an insulating layer, and a source metal layer. The source polysilicon layer disposed on the gate dielectric layer above the drain region can serve as a field plate to enhance the breakdown voltage and to increase the drain-to-source capacitance. In addition, the first drain contact plug of the present invention can reduce the drain-to-source on-resistance and the horizontal extension length.

摘要翻译： 横向扩散的金属氧化物半导体器件包括衬底，栅极电介质层，栅极多晶硅层，源极区域，漏极区域，体区域，第一漏极接触插塞，源极多晶硅层，绝缘层， 和源极金属层。 设置在漏极区域上的栅极电介质层上的源极多晶硅层可以用作场板，以增强击穿电压并增加漏极 - 源极电容。 此外，本发明的第一漏极接触插塞可以减小漏极 - 源极导通电阻和水平延长长度。

公开(公告)号：US20110278671A1

公开(公告)日：2011-11-17

申请号：US12839426

申请日：2010-07-20

申请人： Wei-Chieh Lin ,  Ho-Tai Chen ,  Jia-Fu Lin ,  Po-Hsien Li

发明人： Wei-Chieh Lin ,  Ho-Tai Chen ,  Jia-Fu Lin ,  Po-Hsien Li

IPC分类号： H01L27/088 ,  H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7816 ,  H01L29/7835

摘要： A laterally diffused metal-oxide-semiconductor device includes a substrate, a gate dielectric layer, a gate polysilicon layer, a source region, a drain region, a body region, a first drain contact plug, a source polysilicon layer, an insulating layer, and a source metal layer. The source polysilicon layer disposed on the gate dielectric layer above the drain region can serve as a field plate to enhance the breakdown voltage and to increase the drain-to-source capacitance. In addition, the first drain contact plug of the present invention can reduce the drain-to-source on-resistance and the horizontal extension length.

摘要翻译： 横向扩散的金属氧化物半导体器件包括衬底，栅极电介质层，栅极多晶硅层，源极区域，漏极区域，体区域，第一漏极接触插塞，源极多晶硅层，绝缘层， 和源极金属层。 设置在漏极区域上的栅极电介质层上的源极多晶硅层可以用作场板，以增强击穿电压并增加漏极 - 源极电容。 此外，本发明的第一漏极接触插塞可以减小漏极 - 源极导通电阻和水平延长长度。