Invention Application
US20130260554A1 Semiconductor Devices and Methods of Manufacturing the Same 审中-公开
半导体器件及其制造方法

Semiconductor Devices and Methods of Manufacturing the Same
Abstract:
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.
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