Invention Application
- Patent Title: Semiconductor Devices and Methods of Manufacturing the Same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13905375Application Date: 2013-05-30
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Publication No.: US20130260554A1Publication Date: 2013-10-03
- Inventor: Jeeyong Kim , Woonkyung Lee , Sunggil Kim , Jin-Kyu Kang , Jung-Hwan Lee , Bonyoung Koo , Kihyun Hwang , Byoungsun Ju , Jintae Noh
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2010-0019544 20100304
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/28

Abstract:
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.
Information query
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