Invention Application
- Patent Title: REFLECTIVE MASK AND METHOD OF MAKING SAME
- Patent Title (中): 反射掩模及其制作方法
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Application No.: US13451705Application Date: 2012-04-20
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Publication No.: US20130280643A1Publication Date: 2013-10-24
- Inventor: Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
- Applicant: Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, TLD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, TLD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G03F1/24
- IPC: G03F1/24

Abstract:
A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, the second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer.
Public/Granted literature
- US08877409B2 Reflective mask and method of making same Public/Granted day:2014-11-04
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