Invention Application
- Patent Title: METHOD FOR FORMING DOPING REGION AND METHOD FOR FORMING MOS
- Patent Title (中): 形成区域的方法和形成MOS的方法
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Application No.: US13647344Application Date: 2012-10-08
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Publication No.: US20140099751A1Publication Date: 2014-04-10
- Inventor: Hao Su , Hang Hu , Hong Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L31/18 ; H01L21/28
Abstract:
The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate. A silicon oxide layer is formed on the poly-silicon layer. An implant process is performed to form a doping region in the poly-silicon layer. The present invention further provides a method for forming a MOS.
Public/Granted literature
- US09209344B2 Method for forming doping region and method for forming MOS Public/Granted day:2015-12-08
Information query
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