发明申请
- 专利标题: SEMICONDUCTOR LIGHT EMITTING APPARATUS
- 专利标题(中): 半导体发光装置
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申请号: US14257610申请日: 2014-04-21
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公开(公告)号: US20140319455A1公开(公告)日: 2014-10-30
- 发明人: Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Yusuke YOKOBAYASHI , Takanobu AKAGI , Ryosuke KAWAI
- 申请人: STANLEY ELECTRIC CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: STANLEY ELECTRIC CO., LTD.
- 当前专利权人: STANLEY ELECTRIC CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2013-092884 20130425
- 主分类号: H01L33/40
- IPC分类号: H01L33/40 ; H01L33/08 ; H01L33/06
摘要:
A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.
公开/授权文献
- US09231163B2 Semiconductor light emitting apparatus 公开/授权日:2016-01-05