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公开(公告)号：US20130248895A1
公开(公告)日：2013-09-26
申请号：US13802334
申请日：2013-03-13
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Tatsuma SAITO , Mamoru MIYACHI
IPC: H01L25/075
CPC classification number: H01L25/0753 , H01L33/385 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting device includes a substrate elongated in a lengthwise direction; a plurality of LED chips disposed on the substrate in an intermediate region in widthwise direction, and aligned along the lengthwise direction at a distance of 80 μm or less; and interconnection wirings formed on regions outside the intermediate region in the widthwise direction; wherein each of the LED chips has a p-side electrode disposed on the substrate, a p-type semiconductor layer disposed on the p-side electrode, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer, and has a region in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are patterned, and an n-side electrode formed selectively on a surface of the n-type semiconductor layer and connected to the p-side electrode of an adjacent LED chip through the interconnection wiring.
Abstract translation: 发光器件包括沿长度方向伸长的衬底; 多个LED芯片，其设置在宽度方向的中间区域的基板上，并且沿着长度方向以80μm以下的距离排列; 以及在宽度方向上形成在中间区域外的区域上的互连配线; 其中，所述LED芯片中的每一个具有设置在所述基板上的p侧电极，设置在所述p侧电极上的p型半导体层，形成在所述p型半导体层上的有源层，以及n型半导体层 形成在有源层上，并且具有图案化n型半导体层，有源层和p型半导体层的区域，以及选择性地在n型半导体的表面上形成的n侧电极 并通过互连布线连接到相邻LED芯片的p侧电极。
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公开(公告)号：US20160144771A1
公开(公告)日：2016-05-26
申请号：US14936501
申请日：2015-11-09
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Mamoru MIYACHI , Ryosuke KAWAI
CPC classification number: F21V19/001 , B60Q1/143 , B60Q2300/122 , B60Q2300/41 , B60Q2300/42 , F21S41/143 , F21S41/19 , F21S41/25 , F21S41/663 , F21V23/003 , F21Y2115/10 , H01L25/0753 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting diode apparatus includes a support substrate; and a light-emitting diode array formed of multiple light-emitting diodes arranged two-dimensionally on the support substrate, constituting a light distribution center having a highest brightness in the light-emitting diode array, wherein the multiple light-emitting diodes are divided into a plurality of control units, drive currents of which can be individually controlled, wherein the plurality of control units include a plurality of composite control units in each of which a plurality of light-emitting diodes are connected in series, and wherein among the plurality of light-emitting diodes in each of the composite control units, a light-emitting diode which is positioned farther from the light distribution center has a larger light-emitting area than that of a light-emitting diode which is positioned nearer from the light distribution center.
Abstract translation: 发光二极管装置包括：支撑基板; 以及在支撑基板上二维配置的多个发光二极管构成的发光二极管阵列，构成在发光二极管阵列中具有最高亮度的配光中心，其中，多个发光二极管分为 多个控制单元，其驱动电流可以单独控制，其中多个控制单元包括多个复合控制单元，其中多个发光二极管串联连接，并且其中在多个控制单元 在复合控制单元中的发光二极管，位于比配光中心更远的发光二极管的发光面积比发光二极管的位置更靠近配光中心 。
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公开(公告)号：US20140131745A1
公开(公告)日：2014-05-15
申请号：US14079382
申请日：2013-11-13
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Ryosuke KAWAI , Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Takanobu AKAGI
IPC: H01L33/08
CPC classification number: H01L27/156 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
Abstract: An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.
Abstract translation: LED器件包括第一和第二LED元件，其包含第一导电类型的下层，有源层和第二导电类型的上层，其中第二LED元件在下层具有第三和第四电极，凹部具有 侧表面暴露上层，活性层和下层，并到达第三电极，设置在上层上的第五电极，其在凹部的侧表面上延伸并与第三电极连接，并且从上层延伸并到达 第三和第四电极之间的有源层，以将第三电极与第四电极电分离。
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公开(公告)号：US20190189896A1
公开(公告)日：2019-06-20
申请号：US16222236
申请日：2018-12-17
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Mamoru MIYACHI
IPC: H01L41/09 , H01L41/047 , H01L23/525 , G02B26/08
CPC classification number: H01L41/094 , G02B26/0858 , H01L23/5256 , H01L41/0475
Abstract: A piezoelectric actuator is formed like a rectangular flat plate, and includes a substrate layer, a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order from bottom to top in a thickness direction. The upper electrode layer is constituted of a plurality of electrode segments separated in a surface direction, and connection wires connecting the electrode segments which are adjoining in the surface direction.
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5.发明申请公开(公告)号：US20160343907A1
公开(公告)日：2016-11-24
申请号：US15157102
申请日：2016-05-17
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Ryosuke KAWAI , Mamoru MIYACHI
CPC classification number: H01L33/382 , H01L25/0753
Abstract: A semiconductor light-emitting element comprises: a semiconductor structure layer including a first semiconductor layer having a first conductivity type, a light-emitting layer and a second semiconductor layer having a second conductivity type opposite to the first conductivity type being laminated in sequence; a first electrode including a first electrode layer formed on the first semiconductor layer and a first contact electrode connected to the first electrode layer at a position displaced from a center of the first electrode layer in an intra-layer direction of the first electrode layer; and a second electrode extending through the first electrode layer, the first semiconductor layer and the light-emitting layer and being connected to the second semiconductor layer.
Abstract translation: 半导体发光元件包括：依次层叠包括具有第一导电类型的第一半导体层，发光层和具有与第一导电类型相反的第二导电类型的第二半导体层的半导体结构层; 第一电极，其包括形成在第一半导体层上的第一电极层和在第一电极层的层内方向上从位于第一电极层的中心的位置连接到第一电极层的第一接触电极; 以及延伸穿过第一电极层，第一半导体层和发光层并连接到第二半导体层的第二电极。
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Patent Agency Ranking
公开(公告)号：US20160027956A1
公开(公告)日：2016-01-28
申请号：US14774579
申请日：2014-03-05
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Takanobu AKAGI , Tatsuma SAITO , Mamoru MIYACHI
CPC classification number: H01L33/005 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/32
Abstract: Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.
Abstract translation: 提供一种高度可靠的半导体发光元件，其具有均匀排列并且具有相同尺寸的均匀突起及其制造方法。 根据本发明的半导体发光元件的制造方法包括：在半导体结构层的表面上形成具有沿半导体结构层的晶轴等间隔设置的多个开口的掩模层; 在从掩模层中的开口露出的半导体结构层的表面上进行等离子体处理; 去除掩模层; 并湿式蚀刻半导体结构层的表面以在半导体结构层的表面上形成突起。
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公开(公告)号：US20130221384A1
公开(公告)日：2013-08-29
申请号：US13779694
申请日：2013-02-27
Applicant: Stanley Electric Co., Ltd.
Inventor： Tatsuma SAITO , Mamoru MIYACHI , Takako CHINONE , Noriko NIHEI , Takanobu AKAGI
CPC classification number: H01L33/44 , H01L27/156 , H01L33/0079 , H01L33/504 , H01L33/58
Abstract: A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.
Abstract translation: 半导体发光元件阵列包括：支撑基板; 设置在所述支撑基板上的多个半导体发光元件，被街道隔开的一对相邻的半导体发光元件，每个所述半导体发光元件包括： 形成在所述支撑基板上的第一电极，形成在所述第一电极上并且包括具有第一导电类型的第一半导体层的叠层，形成在所述第一半导体层上的有源层和形成在所述第一半导体层上的第二半导体层的半导体层叠体 有源层，并具有不同于第一导电类型的第二导电类型，以及选择性地形成在半导体层叠体的第二半导体层上的第二电极; 以及具有电绝缘性和光学传播性质的连接构件，被设置成覆盖一对相邻半导体叠片之间的至少部分街道。
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公开(公告)号：US20230097867A1
公开(公告)日：2023-03-30
申请号：US17797646
申请日：2021-01-29
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Mamoru MIYACHI
Abstract: An optical scanning device includes a control unit, a light deflector, light detection units, and a light source. A mirror unit of the light deflector has a flat reflection part for generating scanning light and a groove-shaped reflection part for generating twice reflected light, and performs reciprocating rotation about a rotation axis. The light detection units are disposed at positions on the scanning trajectory of the scanning light where the twice reflected light is received, and are each divided into light detectors in the scanning direction of the scanning light by a division line. The control unit detects the deflection angle θ of the mirror unit based on both the output of the light detector and the output of the light detector.
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公开(公告)号：US20170309801A1
公开(公告)日：2017-10-26
申请号：US15494080
申请日：2017-04-21
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Ryosuke KAWAI , Mamoru MIYACHI
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/153 , H01L33/486 , H01L33/507
Abstract: The light-emitting device of the present invention includes: a support; a plurality of light-emitting elements arranged in a row on the support; and a conductor trace portion configured from a plurality of conductor traces which extend on the support from one end portion of the row to the other end portion of the row which are each electrically connected to each of the plurality of light-emitting elements. Each of the plurality of conductor traces is configured such that the trace width in the direction of extension in a region under one light-emitting element to which the conductor trace is electrically connected is greater than the trace width in a region extending in the direction of extension side by side with a conductor trace connected to a light-emitting element disposed closer to the one end portion than the one light-emitting element is.
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10.发明申请SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE ARRAY 有权半导体发光器件和半导体发光器件阵列公开(公告)号：US20160336479A1
公开(公告)日：2016-11-17
申请号：US15144267
申请日：2016-05-02
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Mamoru MIYACHI , Noriko NIHEI
CPC classification number: H01L33/382 , F21S41/141 , H01L33/08 , H01L33/22 , H01L33/44
Abstract: A semiconductor light-emitting device comprises an optical semiconductor multilayer disposed above a support substrate, which has a structure in which a first semiconductor layer having a first conductivity type, an active layer having light emitting properties, and a second semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked from the support substrate side, in which a groove, which has a height exceeding at least the active layer from the support substrate side, is formed along an outer edge of the optical semiconductor multilayer, and which includes an external region being a region further outside than the groove, an inner region being a region further inside than the groove, and a connection region corresponding to a region where the groove is provided, in plan view.
Abstract translation: 半导体发光器件包括设置在支撑衬底上方的光学半导体多层，其具有其中具有第一导电类型的第一半导体层，具有发光特性的有源层和具有第二导电性的第二半导体层的结构 沿着光半导体多层的外缘形成有从支撑基板侧至少具有从支撑基板侧突出的高度超过活性层的槽的支撑基板侧依次层叠与第一导电类型不同的类型， 其包括外部区域，该外部区域是比所述凹槽更外侧的区域，内部区域是在所述凹槽中进一步内侧的区域，以及与所述凹槽设置的区域对应的连接区域。
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