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公开(公告)号：US20130248918A1
公开(公告)日：2013-09-26
申请号：US13845063
申请日：2013-03-17
发明人： Mamoru MIYACHI , Tatsuma SAITO , Takako CHINONE , Takanobu AKAGI
CPC分类号： H01L33/32 , F21S41/141 , F21S43/14 , H01L23/4824 , H01L24/24 , H01L24/29 , H01L24/82 , H01L24/83 , H01L24/94 , H01L33/0079 , H01L33/0095 , H01L33/20 , H01L33/38 , H01L33/405 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/83001 , H01L2224/92244 , H01L2924/01322 , H01L2924/10156 , H01L2924/12041 , H01L2924/12042 , H01L2924/0105 , H01L2924/00014 , H01L2924/01049 , H01L2924/00
摘要： A semiconductor light emitting element has a cross-sectional structure comprising a support substrate, a semiconductor lamination located over the support substrate, and a joint layer located between the semiconductor lamination and the support substrate, containing a first jointing layer located on the semiconductor lamination side and a second jointing layer located on the support substrate side. In the plan view, the semiconductor lamination has corner portions and side portions along the periphery, the first jointing layer is encompassed by the second jointing layer, the second jointing layer is encompassed by the semiconductor lamination, and an annular region defined between outlines of the semiconductor lamination and of the first jointing layer has first portions corresponding to the corner portions of the semiconductor lamination and second portions corresponding to the side portions of the semiconductor lamination, widths of the first portions being narrower than widths of the second portions.
摘要翻译： 半导体发光元件具有包括支撑基板，位于支撑基板上方的半导体层叠体和位于半导体层叠体和支撑基板之间的接合层的横截面结构，其包含位于半导体层叠侧的第一接合层 以及位于支撑基板侧的第二接合层。 在平面图中，半导体层叠具有沿着周边的角部和侧部，第一接合层被第二接合层包围，第二接合层被半导体层叠包围，并且在第二接合层的轮廓之间限定环状区域 半导体层叠体和第一接合层具有与半导体层叠体的角部对应的第一部分和与半导体层叠体的侧面部对应的第二部分，第一部分的宽度比第二部分的宽度窄。
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公开(公告)号：US20180166855A1
公开(公告)日：2018-06-14
申请号：US15836601
申请日：2017-12-08
发明人： Tetsuya TAKEUCHI , Isamu AKASAKI , Takanobu AKAGI
CPC分类号： H01S5/18377 , H01L21/02365 , H01S5/026 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/3063 , H01S5/3201 , H01S5/32341 , H01S2304/04
摘要： Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.
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公开(公告)号：US20160027956A1
公开(公告)日：2016-01-28
申请号：US14774579
申请日：2014-03-05
发明人： Takanobu AKAGI , Tatsuma SAITO , Mamoru MIYACHI
CPC分类号： H01L33/005 , H01L33/16 , H01L33/20 , H01L33/22 , H01L33/32
摘要： Provided are a highly reliable semiconductor light-emitting element having uniform protrusions that are arranged regularly and have the same size and a method of producing the same. The method of producing a semiconductor light-emitting element according to the present invention includes: forming a mask layer having a plurality of openings that are arranged at equal intervals along a crystal axis of a semiconductor structure layer on the surface of the semiconductor structure layer; performing a plasma treatment on the surface of the semiconductor structure layer exposed from the openings in the mask layer; removing the mask layer; and wet-etching the surface of the semiconductor structure layer to form protrusions on the surface of the semiconductor structure layer.
摘要翻译： 提供一种高度可靠的半导体发光元件，其具有均匀排列并且具有相同尺寸的均匀突起及其制造方法。 根据本发明的半导体发光元件的制造方法包括：在半导体结构层的表面上形成具有沿半导体结构层的晶轴等间隔设置的多个开口的掩模层; 在从掩模层中的开口露出的半导体结构层的表面上进行等离子体处理; 去除掩模层; 并湿式蚀刻半导体结构层的表面以在半导体结构层的表面上形成突起。
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公开(公告)号：US20130221384A1
公开(公告)日：2013-08-29
申请号：US13779694
申请日：2013-02-27
发明人： Tatsuma SAITO , Mamoru MIYACHI , Takako CHINONE , Noriko NIHEI , Takanobu AKAGI
CPC分类号： H01L33/44 , H01L27/156 , H01L33/0079 , H01L33/504 , H01L33/58
摘要： A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.
摘要翻译： 半导体发光元件阵列包括：支撑基板; 设置在所述支撑基板上的多个半导体发光元件，被街道隔开的一对相邻的半导体发光元件，每个所述半导体发光元件包括： 形成在所述支撑基板上的第一电极，形成在所述第一电极上并且包括具有第一导电类型的第一半导体层的叠层，形成在所述第一半导体层上的有源层和形成在所述第一半导体层上的第二半导体层的半导体层叠体 有源层，并具有不同于第一导电类型的第二导电类型，以及选择性地形成在半导体层叠体的第二半导体层上的第二电极; 以及具有电绝缘性和光学传播性质的连接构件，被设置成覆盖一对相邻半导体叠片之间的至少部分街道。
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公开(公告)号：US20160204309A1
公开(公告)日：2016-07-14
申请号：US14910998
申请日：2014-08-01
发明人： Takanobu AKAGI , Tatsuma SAITO
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/18
摘要： A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.
摘要翻译： 在半导体结构层的表面上形成在半导体结构层的表面上基于晶体方向配置的易于蚀刻的部分的步骤，以及将半导体结构层的表面进行 包括湿蚀刻以形成包括在半导体结构层的表面上衍生自半导体结构层的晶体结构的多个突起的不平坦结构表面。
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6.发明申请NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PERIODIC GAIN ACTIVE LAYERS 有权具有周期性增益活性层的氮化物半导体发光器件公开(公告)号：US20160163919A1
公开(公告)日：2016-06-09
申请号：US14955409
申请日：2015-12-01
发明人： Kenjo MATSUI , Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI , Takanobu AKAGI , Sho IWAYAMA
CPC分类号： H01L33/06 , H01L33/105 , H01S5/00 , H01S5/0425 , H01S5/1096 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.
摘要翻译： 具有周期性增益有源层的氮化物半导体发光器件包括n型半导体层，p型半导体层和谐振器。 该器件还包括设置在n型和p型半导体层之间的多个有源层，以便对应于存在于谐振器中的光的峰值强度位置和设置在有源层之间的至少一层中间层。 配置在p型半导体层侧的有源层的发光强度比设置在n型半导体层侧的有源层的发光强度大。
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公开(公告)号：US20140319534A1
公开(公告)日：2014-10-30
申请号：US14257666
申请日：2014-04-21
发明人： Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Yasuyuki SHIBATA , Yusuke YOKOBAYASHI , Takanobu AKAGI , Ryosuke KAWAI
CPC分类号： H01L33/32 , H01L25/0753 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2924/00
摘要： A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.
摘要翻译： 半导体发光元件包括提供通孔的光学半导体层叠层，设置在光学半导体层叠层的表面上并与电极的周边部分与第二半导体层分离的电极，第一透明绝缘层 设置在电极的周边部分和光学半导体层叠层之间，以及设置成覆盖电极的第二透明绝缘层，其与第一透明绝缘层一起包围电极的周边部分。
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公开(公告)号：US20140319455A1
公开(公告)日：2014-10-30
申请号：US14257610
申请日：2014-04-21
发明人： Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Yusuke YOKOBAYASHI , Takanobu AKAGI , Ryosuke KAWAI
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/06 , H01L33/08 , H01L33/382 , H01L33/60 , H01L33/62 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.
摘要翻译： 半导体发光装置包括n型层，有源层和p型层的半导体层叠; 从p型层穿透层叠并露出n型层的凹部; n侧电极形成在凹部的底部的n型层上并在p型层上方向上延伸; p侧电极，形成在p型层上，在俯视图中具有围绕凹部的开口，n侧电极从内侧延伸到凹部的上方; 以及设置在p型层的p侧和n侧电极之间的绝缘层，p侧电极构成反射从有源层入射的光的反射电极，n侧电极包括反射电极层 在平面图中覆盖开口并且反射从发射层侧入射的光，反射电极层在平面图中具有与p侧电极的周边部分重叠的周边部分。
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公开(公告)号：US20150129922A1
公开(公告)日：2015-05-14
申请号：US14600831
申请日：2015-01-20
发明人： Takanobu AKAGI
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/02 , H01L33/10 , H01L33/42 , H01L33/58 , H01L2933/0016 , H01L2933/0058
摘要： A semiconductor light emitting device includes a semiconductor lamination including a p-type semiconductor layer, an active semiconductor layer, and an n-type semiconductor layer; opposing electrode structure including a first electrode structure formed above the p-type semiconductor layer, and a second electrode structure formed above the n-type semiconductor layer; and brightness grade producing structure including a surface layer of at least one of the p-type semiconductor layer and the n-type semiconductor layer and producing brightness grade gradually changing from one edge to opposite edge of light output plane.
摘要翻译： 半导体发光器件包括包括p型半导体层，有源半导体层和n型半导体层的半导体层叠体; 包括形成在p型半导体层上方的第一电极结构的对置电极结构和形成在n型半导体层上方的第二电极结构; 以及亮度等级的制造结构，其包括p型半导体层和n型半导体层中的至少一种的表面层，并且产生从光输出面的一个边缘到相对边缘逐渐变化的亮度等级。
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公开(公告)号：US20140131745A1
公开(公告)日：2014-05-15
申请号：US14079382
申请日：2013-11-13
发明人： Ryosuke KAWAI , Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Takanobu AKAGI
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.
摘要翻译： LED器件包括第一和第二LED元件，其包含第一导电类型的下层，有源层和第二导电类型的上层，其中第二LED元件在下层具有第三和第四电极，凹部具有 侧表面暴露上层，活性层和下层，并到达第三电极，设置在上层上的第五电极，其在凹部的侧表面上延伸并与第三电极连接，并且从上层延伸并到达 第三和第四电极之间的有源层，以将第三电极与第四电极电分离。
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