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    LIGHT EMITTING DEVICE
    1.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20130248895A1

    公开(公告)日：2013-09-26

    申请号：US13802334

    申请日：2013-03-13

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Tatsuma SAITO ,  Mamoru MIYACHI

    IPC: H01L25/075

    CPC classification number: H01L25/0753 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light emitting device includes a substrate elongated in a lengthwise direction; a plurality of LED chips disposed on the substrate in an intermediate region in widthwise direction, and aligned along the lengthwise direction at a distance of 80 μm or less; and interconnection wirings formed on regions outside the intermediate region in the widthwise direction; wherein each of the LED chips has a p-side electrode disposed on the substrate, a p-type semiconductor layer disposed on the p-side electrode, an active layer formed on the p-type semiconductor layer, and an n-type semiconductor layer formed on the active layer, and has a region in which the n-type semiconductor layer, the active layer, and the p-type semiconductor layer are patterned, and an n-side electrode formed selectively on a surface of the n-type semiconductor layer and connected to the p-side electrode of an adjacent LED chip through the interconnection wiring.

    Abstract translation: 发光器件包括沿长度方向伸长的衬底; 多个LED芯片，其设置在宽度方向的中间区域的基板上，并且沿着长度方向以80μm以下的距离排列; 以及在宽度方向上形成在中间区域外的区域上的互连配线; 其中，所述LED芯片中的每一个具有设置在所述基板上的p侧电极，设置在所述p侧电极上的p型半导体层，形成在所述p型半导体层上的有源层，以及n型半导体层 形成在有源层上，并且具有图案化n型半导体层，有源层和p型半导体层的区域，以及选择性地在n型半导体的表面上形成的n侧电极 并通过互连布线连接到相邻LED芯片的p侧电极。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光元件及其制造方法

    公开(公告)号：US20160204309A1

    公开(公告)日：2016-07-14

    申请号：US14910998

    申请日：2014-08-01

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Takanobu AKAGI ,  Tatsuma SAITO

    IPC: H01L33/22 ,  H01L33/18 ,  H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/18

    Abstract: A step of forming, on a surface of a semiconductor structure layer, easily-to-be-etched portions arranged on the basis of crystal directions on the surface of the semiconductor structure layer and a step of subjecting the surface of the semiconductor structure layer to wet etching to form an uneven structure surface including a plurality of protrusions derived from a crystal structure of the semiconductor structure layer on the surface of the semiconductor structure layer are included.

    Abstract translation: 在半导体结构层的表面上形成在半导体结构层的表面上基于晶体方向配置的易于蚀刻的部分的步骤，以及将半导体结构层的表面进行 包括湿蚀刻以形成包括在半导体结构层的表面上衍生自半导体结构层的晶体结构的多个突起的不平坦结构表面。

    SEMICONDUCTOR LIGHT EMITTING APPARATUS
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING APPARATUS 有权
    半导体发光装置

    公开(公告)号：US20140319455A1

    公开(公告)日：2014-10-30

    申请号：US14257610

    申请日：2014-04-21

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Mamoru MIYACHI ,  Tatsuma SAITO ,  Takako HAYASHI ,  Yusuke YOKOBAYASHI ,  Takanobu AKAGI ,  Ryosuke KAWAI

    IPC: H01L33/40 ,  H01L33/08 ,  H01L33/06

    CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08 ,  H01L33/382 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/10158 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.

    Abstract translation: 半导体发光装置包括n型层，有源层和p型层的半导体层叠; 从p型层穿透层叠并露出n型层的凹部; n侧电极形成在凹部的底部的n型层上并在p型层上方向上延伸; p侧电极，形成在p型层上，在俯视图中具有围绕凹部的开口，n侧电极从内侧延伸到凹部的上方; 以及设置在p型层的p侧和n侧电极之间的绝缘层，p侧电极构成反射从有源层入射的光的反射电极，n侧电极包括反射电极层 在平面图中覆盖开口并且反射从发射层侧入射的光，反射电极层在平面图中具有与p侧电极的周边部分重叠的周边部分。

    LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME
    6.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20150295145A1

    公开(公告)日：2015-10-15

    申请号：US14682680

    申请日：2015-04-09

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Tatsuma SAITO ,  Satoshi TANAKA

    IPC: H01L33/50 ,  H01L33/08 ,  H01L33/46

    CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/46 ,  H01L33/50 ,  H01L33/504 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2924/00

    Abstract: A light-emitting device can prevent light from leaking through an unwanted area (or an unintended area) and can improve color unevenness and brightness unevenness. A method of producing such a light-emitting device, can include: disposing a plurality of light-emitting elements on a surface of a supporting substrate; forming a reflecting layer on the respective light-emitting elements along peripheries of the light-emitting elements facing an area between the light-emitting elements; forming a wavelength conversion layer so as to embed the plurality of light-emitting elements therein on the supporting substrate; and irradiating the wavelength conversion layer with laser beams to remove the wavelength conversion layer disposed at the area between the light-emitting elements.

    Abstract translation: 发光装置可以防止光从不需要的区域（或非预期区域）泄漏，并且可以改善颜色不均匀性和亮度不均匀性。 制造这样的发光装置的方法可以包括：在支撑基板的表面上配置多个发光元件; 沿着与所述发光元件之间的区域相对的所述发光元件的周边在各个发光元件上形成反射层; 形成波长转换层，以将多个发光元件嵌入到支撑基板上; 并用激光束照射波长转换层，以去除设置在发光元件之间的区域上的波长转换层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20140131745A1

    公开(公告)日：2014-05-15

    申请号：US14079382

    申请日：2013-11-13

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Ryosuke KAWAI ,  Mamoru MIYACHI ,  Tatsuma SAITO ,  Takako HAYASHI ,  Takanobu AKAGI

    IPC: H01L33/08

    CPC classification number: H01L27/156 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.

    Abstract translation: LED器件包括第一和第二LED元件，其包含第一导电类型的下层，有源层和第二导电类型的上层，其中第二LED元件在下层具有第三和第四电极，凹部具有 侧表面暴露上层，活性层和下层，并到达第三电极，设置在上层上的第五电极，其在凹部的侧表面上延伸并与第三电极连接，并且从上层延伸并到达 第三和第四电极之间的有源层，以将第三电极与第四电极电分离。

    VEHICULAR LIGHTING DEVICE
    8.
    发明申请
    VEHICULAR LIGHTING DEVICE 审中-公开

    公开(公告)号：US20170292670A1

    公开(公告)日：2017-10-12

    申请号：US15630548

    申请日：2017-06-22

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Philip RACKOW ,  Tatsuma SAITO ,  Yoshiaki NAKAZATO ,  Naochika HORIO

    IPC: F21S8/10

    CPC classification number: F21S41/12 ,  F21S41/00 ,  F21S41/14 ,  F21S41/16 ,  F21S41/24 ,  F21S41/25 ,  F21S41/255 ,  F21S43/00 ,  F21S45/70

    Abstract: A vehicular lighting device from which a fluorescent material is omitted that may cause deterioration of color rendering properties and occurrence of color separation is provided. The vehicular lighting device can have higher in color rendering properties than a conventional white light source obtained by combining a semiconductor light-emitting element such as an LD and the fluorescent material (wavelength converting member) and can suppress occurrence of color separation. A vehicular lighting device of the presently disclosed subject matter includes a supercontinuum light source that outputs supercontinuum light containing a visible wavelength region, and an optical system that controls the supercontinuum light output by the supercontinuum light source.

    SEMICONDUCTOR OPTICAL DEVICE AND ITS MANUFACTURE
    9.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICE AND ITS MANUFACTURE 有权
    半导体光学器件及其制造

    公开(公告)号：US20150295131A1

    公开(公告)日：2015-10-15

    申请号：US14747862

    申请日：2015-06-23

    Applicant: STANLEY ELECTRIC CO., LTD.

    Inventor： Tatsuma SAITO

    IPC: H01L33/20 ,  H01L33/00 ,  H01L33/32

    CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

    Abstract: The semiconductor optical device has a chip of semiconductor lamination having a first semiconductor layer of a first conductivity type having a first surface, a second semiconductor layer of a second conductivity type opposite to the first conductivity type having a second surface, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, the chip having side surface including a first side surface which is contiguous to the second surface, forms an obtuse angle with the second surface, extends across the second semiconductor layer and the active layer, and enters the first semiconductor layer, and a cracked surface which is contiguous to the first side surface, a first conductivity type side electrode formed on the first surface, and a second conductivity type side electrode formed on the second surface, wherein in-plane size of the semiconductor lamination is 50 μm or less.

    Abstract translation: 半导体光学器件具有半导体层叠芯片，其具有第一导电类型的第一半导体层，具有第一表面，第二导电类型的第二半导体层与具有第二表面的第一导电类型相反，以及夹层的有源层 在第一半导体层和第二半导体层之间，具有包括与第二表面邻接的第一侧表面的侧表面的芯片与第二表面形成钝角，延伸穿过第二半导体层和有源层，以及 进入第一半导体层和与第一侧表面相邻的裂纹表面，形成在第一表面上的第一导电型侧电极和形成在第二表面上的第二导电型侧电极，其中面内尺寸 半导体层叠为50μm以下。

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