-
公开(公告)号：US20140131745A1
公开(公告)日：2014-05-15
申请号：US14079382
申请日：2013-11-13
发明人： Ryosuke KAWAI , Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Takanobu AKAGI
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： An LED device includes first and second LED elements containing a lower layer of first conductivity type, an active layer, and an upper layer of second conductivity type, wherein the second LED element has third and fourth electrodes on the lower layer, recessed portion having a side surface exposing the upper, active and lower layers, and reaching the third electrode, fifth electrode disposed on the upper layer extending on the side surface of the recessed portion, and connected with the third electrode, and groove extending from the upper layer and reaching the active layer between the third and fourth electrodes to electrically separate the third electrode from the fourth electrode.
摘要翻译： LED器件包括第一和第二LED元件，其包含第一导电类型的下层，有源层和第二导电类型的上层，其中第二LED元件在下层具有第三和第四电极，凹部具有 侧表面暴露上层，活性层和下层，并到达第三电极，设置在上层上的第五电极，其在凹部的侧表面上延伸并与第三电极连接，并且从上层延伸并到达 第三和第四电极之间的有源层，以将第三电极与第四电极电分离。
-
公开(公告)号：US20140319534A1
公开(公告)日：2014-10-30
申请号：US14257666
申请日：2014-04-21
发明人： Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Yasuyuki SHIBATA , Yusuke YOKOBAYASHI , Takanobu AKAGI , Ryosuke KAWAI
CPC分类号： H01L33/32 , H01L25/0753 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01L2924/00
摘要： A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.
摘要翻译： 半导体发光元件包括提供通孔的光学半导体层叠层，设置在光学半导体层叠层的表面上并与电极的周边部分与第二半导体层分离的电极，第一透明绝缘层 设置在电极的周边部分和光学半导体层叠层之间，以及设置成覆盖电极的第二透明绝缘层，其与第一透明绝缘层一起包围电极的周边部分。
-
公开(公告)号：US20140319455A1
公开(公告)日：2014-10-30
申请号：US14257610
申请日：2014-04-21
发明人： Mamoru MIYACHI , Tatsuma SAITO , Takako HAYASHI , Yusuke YOKOBAYASHI , Takanobu AKAGI , Ryosuke KAWAI
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/06 , H01L33/08 , H01L33/382 , H01L33/60 , H01L33/62 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view.
摘要翻译： 半导体发光装置包括n型层，有源层和p型层的半导体层叠; 从p型层穿透层叠并露出n型层的凹部; n侧电极形成在凹部的底部的n型层上并在p型层上方向上延伸; p侧电极，形成在p型层上，在俯视图中具有围绕凹部的开口，n侧电极从内侧延伸到凹部的上方; 以及设置在p型层的p侧和n侧电极之间的绝缘层，p侧电极构成反射从有源层入射的光的反射电极，n侧电极包括反射电极层 在平面图中覆盖开口并且反射从发射层侧入射的光，反射电极层在平面图中具有与p侧电极的周边部分重叠的周边部分。
-
公开(公告)号：US20140077155A1
公开(公告)日：2014-03-20
申请号：US14029674
申请日：2013-09-17
发明人： Takako HAYASHI
IPC分类号： H01L33/24
CPC分类号： H01L33/24 , H01L25/0753 , H01L27/153 , H01L27/156 , H01L27/3204 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/385 , H01L2924/0002 , H01L2924/00
摘要： An LED array includes a substrate and a semiconductor structure layer provided on the substrate. The semiconductor structure layer includes a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer. The semiconductor structure layer is partitioned into a plurality of light emitting sections by grooves formed in the semiconductor structure layer. Each groove is defined by two opposite side faces of adjacent light emitting sections. Each side face has a recessed and protruding configuration. In one embodiment, the protrusions and recesses of one side face of one light emitting section fit in respective recesses and protrusions of a corresponding side face of an adjacent light emitting section.
摘要翻译： LED阵列包括衬底和设置在衬底上的半导体结构层。 半导体结构层包括第一半导体层，形成在第一半导体层上的有源层和形成在有源层上的第二半导体层。 半导体结构层通过形成在半导体结构层中的沟槽分成多个发光部分。 每个凹槽由相邻发光部分的两个相对侧面限定。 每个侧面具有凹入和突出的构造。 在一个实施例中，一个发光部分的一个侧面的突起和凹陷装配在相邻发光部分的相应侧面的相应凹部和突起中。
-
-
-
搜索结果
4 条记录 (耗时 0.014 秒)
