Invention Application
US20150158775A1 ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS
有权
具有离子辅助沉积的离子束溅射用于在室内组分上涂覆
- Patent Title: ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS
- Patent Title (中): 具有离子辅助沉积的离子束溅射用于在室内组分上涂覆
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Application No.: US14562339Application Date: 2014-12-05
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Publication No.: US20150158775A1Publication Date: 2015-06-11
- Inventor: Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang
- Applicant: Applied Materials, Inc.
- Main IPC: C04B41/50
- IPC: C04B41/50 ; C23C14/22 ; C04B41/00
Abstract:
A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.
Public/Granted literature
- US09725799B2 Ion beam sputtering with ion assisted deposition for coatings on chamber components Public/Granted day:2017-08-08
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