发明申请
US20150158775A1 ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS
有权
具有离子辅助沉积的离子束溅射用于在室内组分上涂覆
- 专利标题： ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS
- 专利标题（中）： 具有离子辅助沉积的离子束溅射用于在室内组分上涂覆
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申请号： US14562339申请日： 2014-12-05
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公开(公告)号： US20150158775A1公开(公告)日： 2015-06-11
- 发明人: Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang
- 申请人： Applied Materials, Inc.
- 主分类号： C04B41/50
- IPC分类号： C04B41/50 ; C23C14/22 ; C04B41/00
摘要：
A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.