Invention Application
US20150184294A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM
审中-公开
薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
- Patent Title: FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM
- Patent Title (中): 薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
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Application No.: US14658295Application Date: 2015-03-16
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Publication No.: US20150184294A1Publication Date: 2015-07-02
- Inventor: Hitoshi KATO , Kohichi ORITO , Hiroyuki KIKUCHI , Muneyuki OTANI , Takeshi KUMAGAI , Kensaku NARUSHIMA , Takashi NISHIMORI
- Applicant: Tokyo Electron Limited
- Priority: JP2009-295351 20091225
- Main IPC: C23C16/458
- IPC: C23C16/458 ; C23C16/50 ; C23C16/34 ; C23C16/44 ; C23C16/52 ; C23C16/455
Abstract:
A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.
Information query
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