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    METHOD OF MANUFACTURING A SILICON OXIDE FILM
    1.
    发明申请
    METHOD OF MANUFACTURING A SILICON OXIDE FILM 有权
    制造氧化硅膜的方法

    公开(公告)号：US20150079808A1

    公开(公告)日：2015-03-19

    申请号：US14480756

    申请日：2014-09-09

    申请人： Tokyo Electron Limited

    发明人： Tatsuya TAMURA ,  Takeshi KUMAGAI ,  Takashi CHIBA

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02271 ,  C23C16/402 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228

    摘要： A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.

    摘要翻译： 提供一种制造氧化硅膜的方法。 在该方法中，将表面具有金属膜的基板装载到反应室中，在将反应室内的载体加载到反应室内之后，通过氢气供给部开始向反应室内供给氢气 。 然后，在开始向反应室供给氢气的步骤之后，通过氧化气体供给部开始向反应室内供给氧化气体，通过在反应室内供给含硅气体开始， 在开始向反应室供应氢气的步骤之后的含硅气体供给单元。

    FILM FORMING METHOD AND FILM FORMING APPARATUS
    2.
    发明申请
    FILM FORMING METHOD AND FILM FORMING APPARATUS 有权
    薄膜成型方法和薄膜成型装置

    公开(公告)号：US20150315705A1

    公开(公告)日：2015-11-05

    申请号：US14694200

    申请日：2015-04-23

    申请人： TOKYO ELECTRON LIMITED

    发明人： Takeshi KUMAGAI ,  Muneyuki OTANI ,  Kazuya OKUBO

    IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50

    CPC分类号： C23C16/40 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32899

    摘要： A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product.

    摘要翻译： 成膜方法包括将含有第一金属元素的第一源气体供应到基板上，将含有第二金属元素的第二源气体供应到基板上，提供转换成等离子体的反应气体，并含有与第一金属反应的非金属元素 元素和第二金属元素分别产生第一反应产物和第二反应产物到基底，以产生含有第一金属元素，第二金属元素和非金属元素的第三反应产物。 第三反应产物中含有的第一金属元素的混合比高于第二金属元素，第二反应产物的结晶温度高于第一反应产物的结晶温度。

    METHOD OF MANUFACTURING A SILICON OXIDE FILM
    4.
    发明申请
    METHOD OF MANUFACTURING A SILICON OXIDE FILM 有权
    制造氧化硅膜的方法

    公开(公告)号：US20150079807A1

    公开(公告)日：2015-03-19

    申请号：US14480748

    申请日：2014-09-09

    申请人： Tokyo Electron Limited

    发明人： Tatsuya TAMURA ,  Takeshi KUMAGAI

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4584 ,  H01L21/02219 ,  H01L21/02271

    摘要： A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate receiving part on its upper surface, a first gas supply part to supply a first gas to the turntable in a first process area, and a second gas supply part arranged in a second process area apart from the first process area to supply a second gas. In the method, a silicon-containing gas is supplied from the first gas supply part as the first gas. A hydrogen gas and an oxidation gas are supplied from the second gas supply part as the second gas. The first gas is caused to adsorb on the substrate in the first process area, and the second gas is caused to react with the first gas adsorbed on the substrate in the second process area while rotating the turntable.

    摘要翻译： 提供了使用成膜装置制造氧化硅膜的方法。 该装置包括在其上表面上包括基板接收部分的转台，在第一处理区域中向第一处理区域提供第一气体的第一气体供应部分和布置在第二处理区域中的第二气体供应部分， 处理区域供应第二气体。 在该方法中，从第一气体供给部供给含硅气体作为第一气体。 作为第二气体，从第二气体供给部供给氢气和氧化气体。 使第一气体吸附在第一处理区域中的基板上，并且使第二气体与第二处理区域中吸附在基板上的第一气体反转，同时旋转转台。

    FILM DEPOSITION METHOD AND COMPUTER PROGRAM STORAGE MEDIUM
    5.
    发明申请
    FILM DEPOSITION METHOD AND COMPUTER PROGRAM STORAGE MEDIUM 审中-公开

    公开(公告)号：US20180080123A1

    公开(公告)日：2018-03-22

    申请号：US15811919

    申请日：2017-11-14

    申请人： Tokyo Electron Limited

    发明人： Shigenori OZAKI ,  Hitoshi KATO ,  Takeshi KUMAGAI

    IPC分类号： C23C16/455 ,  C23C16/40

    CPC分类号： C23C16/45548 ,  C23C16/402 ,  C23C16/45536

    摘要： A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to form a thin film on the substrate; supplying plasma including a chemical component that reacts with second reaction gas adsorbed on the substrate from a plasma generation part to the substrate when the thin film is being formed, thereby to alter the thin film on the substrate; and changing plasma intensity of the plasma supplied to the substrate, at a predetermined point of time to a different plasma intensity of the plasma that is generated and supplied to the substrate by the plasma generation part before the predetermined point of time.

    FILM DEPOSITION METHOD
    6.
    发明申请
    FILM DEPOSITION METHOD 有权
    膜沉积法

    公开(公告)号：US20140370205A1

    公开(公告)日：2014-12-18

    申请号：US14475783

    申请日：2014-09-03

    申请人： Tokyo Electron Limited

    发明人： Hitoshi KATO ,  Hiroyuki KIKUCHI ,  Takeshi KUMAGAI

    IPC分类号： C23C16/458 ,  H01J37/32 ,  C23C16/50

    CPC分类号： C23C16/4581 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32825 ,  H01J2237/032 ,  H01J2237/201 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/0206

    摘要： A film deposition method using a film deposition apparatus, includes: a film deposition process step in which at least a substrate is mounted on at least one of the circular concave portions and a film is deposited on the substrate; and a particle reducing process step performed before or after the film deposition process step, in which particles in the vacuum chamber are reduced without mounting substrates on the circular concave portions, the particle reducing process step including, a step of supplying a first gas to the vacuum chamber; a step of generating plasma from the first gas by supplying high frequency waves to a plasma generating device provided for the vacuum chamber; and a step of exposing the plurality of circular concave portions, on each of which a substrate is not mounted, to the plasma while rotating the susceptor.

    摘要翻译： 使用成膜装置的成膜方法包括：成膜工序，在至少一个所述圆形凹部上至少安装有基板，在所述基板上淀积薄膜; 以及在成膜处理工序之前或之后进行的粒子还原工序，其中真空室中的颗粒在不将基板安装在圆形凹部上的情况下减少，所述颗粒还原工艺步骤包括：将第一气体供应到 真空室; 通过向设置在真空室中的等离子体产生装置提供高频波而从第一气体产生等离子体的步骤; 以及在旋转所述基座的同时，将其中未安装基板的所述多个圆形凹部暴露于所述等离子体的步骤。

    FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
    7.
    发明申请
    FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS 审中-公开

    公开(公告)号：US20170175266A1

    公开(公告)日：2017-06-22

    申请号：US15373777

    申请日：2016-12-09

    申请人： Tokyo Electron Limited

    发明人： Takeshi KUMAGAI

    IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/50

    摘要： A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, a halogen-containing gas is supplied to a top surface of a substrate and an upper portion of a recessed pattern, thereby forming an adsorption blocking group on the top surface of the substrate and the upper portion of the recessed pattern. A first reaction gas is supplied to a surface of the substrate including the top surface and the recessed pattern to cause the first reaction gas to adsorb on an area where the adsorption blocking group is not formed on. A second reaction gas reactable with the first reaction gas is supplied to the surface of the substrate to produce a reaction product of the first reaction gas adsorbed on the bottom portion of the recessed pattern and the second reaction gas.

    FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM
    10.
    发明申请
    FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 有权
    薄膜沉积装置，薄膜​​沉积方法和计算机可读存储介质

    公开(公告)号：US20150024143A1

    公开(公告)日：2015-01-22

    申请号：US14511226

    申请日：2014-10-10

    申请人： Tokyo Electron Limited

    发明人： Takeshi KUMAGAI ,  Hitoshi KATO

    IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/458

    CPC分类号： C23C16/4554 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584

    摘要： In a disclosed film deposition method, after a film deposition—alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layer(s) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.

    摘要翻译： 在所公开的膜沉积方法中，在进行膜沉积改变步骤之后，其中包括在晶片W上吸附含Si的气体的膜沉积工艺，并且通过提供O 3气体来氧化晶片上吸附的含Si气体 通过旋转其上放置晶片的转台和通过等离子体改变氧化硅层的改变过程，从而产生氧化硅层，其中，在该晶圆的上表面上， 氧化硅层被等离子体改变，而不含Si的气体。