公开(公告)号：US20150184293A1

公开(公告)日：2015-07-02

申请号：US14644703

申请日：2015-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO ,  Kohichi ORITO

IPC: C23C16/455 ,  H01L21/762 ,  H01L21/02 ,  C23C16/48 ,  C23C16/40

CPC classification number: C23C16/455 ,  C23C16/402 ,  C23C16/4554 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76224

Abstract: A film formation method performs a supply cycle of sequentially supplying two kinds of reactive gases inside a vacuum container to form a thin film on the substrate. The method includes placing the substrate, including a depressed portion formed thereon, on a table, then adjusting a temperature of the substrate to a temperature at which a first reactive gas is adsorbed and condensed, then supplying the first reactive gas and thereby depositing a condensed substance of the first reactive gas on the substrate, then rotating the table, then partly vaporizing the condensed substance by supplying a heated gas to the substrate; and then supplying a second reactive gas in an activated state to the substrate and thereby causing the second reactive gas to react with the condensed substance.

Abstract translation: 成膜方法进行在真空容器内依次供给两种反应气体的供给循环，在基板上形成薄膜。 该方法包括将包括形成在其上的凹陷部分的基板放置在工作台上，然后将衬底的温度调节到第一反应气体被吸附和冷凝的温度，然后提供第一反应气体，从而沉积冷凝 然后旋转工作台，然后通过向衬底提供加热的气体来部分蒸发冷凝物质; 然后将处于活化状态的第二反应气体供给到基板，从而使第二反应气体与冷凝物质反应。

公开(公告)号：US20150184294A1

公开(公告)日：2015-07-02

申请号：US14658295

申请日：2015-03-16

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Kohichi ORITO ,  Hiroyuki KIKUCHI ,  Muneyuki OTANI ,  Takeshi KUMAGAI ,  Kensaku NARUSHIMA ,  Takashi NISHIMORI

IPC: C23C16/458 ,  C23C16/50 ,  C23C16/34 ,  C23C16/44 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45523 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

Abstract: A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.

Abstract translation: 当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。 在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。