发明申请
- 专利标题： Decreased Switching Current in Spin-Transfer Torque Memory
- 专利标题（中）： 旋转转矩存储器中的开关电流降低
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申请号： US14431607申请日： 2013-06-10
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公开(公告)号： US20150243336A1公开(公告)日： 2015-08-27
- 发明人: Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles S. Kuo , Mark L. Doczy , David L. Kencke
- 申请人： Elijah V. KARPOV , Brian S. DOYLE , Kaan OGUZ , Satyarth SURI , Robert S. CHAU , Charles C. KUO , Mark L. DOCZY , David L. KENCKE , INTEL CORPORATION
- 国际申请： PCT/US2013/045031 WO 20130610
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; H01L43/08 ; H01L43/02
摘要：
Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.
公开/授权文献
- US09214215B2 Decreased switching current in spin-transfer torque memory 公开/授权日：2015-12-15
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