Invention Application
US20150318366A1 FABRICATING METHOD OF TRENCH GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
有权
铁基金属氧化物半导体场效应晶体管的制造方法
- Patent Title: FABRICATING METHOD OF TRENCH GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
- Patent Title (中): 铁基金属氧化物半导体场效应晶体管的制造方法
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Application No.: US14754636Application Date: 2015-06-29
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Publication No.: US20150318366A1Publication Date: 2015-11-05
- Inventor: Chun-Hong Peng , Yu-Hsi Lai
- Applicant: UNITED MICROELECTRONICS CORPORATION
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/306 ; H01L21/02 ; H01L21/321 ; H01L21/28 ; H01L21/308 ; H01L21/311
Abstract:
A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.
Public/Granted literature
- US09525037B2 Fabricating method of trench gate metal oxide semiconductor field effect transistor Public/Granted day:2016-12-20
Information query
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