公开(公告)号：US20150318366A1

公开(公告)日：2015-11-05

申请号：US14754636

申请日：2015-06-29

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chun-Hong Peng ,  Yu-Hsi Lai

IPC: H01L29/423 ,  H01L21/306 ,  H01L21/02 ,  H01L21/321 ,  H01L21/28 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L29/4236 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/28035 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/31105 ,  H01L21/32115 ,  H01L29/0653 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

Abstract: A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.

Abstract translation: 沟槽栅极金属氧化物半导体场效应晶体管包括基板和栅极。 衬底具有沟槽。 沟槽从衬底的表面向下延伸。 门包括插入部分和对称的突出部分。 插入部分嵌入沟槽中。 对称的突出部分在衬底的表面上对称地突出。

公开(公告)号：US09525037B2

公开(公告)日：2016-12-20

申请号：US14754636

申请日：2015-06-29

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chun-Hong Peng ,  Yu-Hsi Lai

IPC: H01L21/3205 ,  H01L29/423 ,  H01L21/308 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321 ,  H01L21/28 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/4236 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/28035 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/31105 ,  H01L21/32115 ,  H01L29/0653 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

Abstract: A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.

Abstract translation: 沟槽栅极金属氧化物半导体场效应晶体管包括基板和栅极。 衬底具有沟槽。 沟槽从衬底的表面向下延伸。 门包括插入部分和对称的突出部分。 插入部分嵌入沟槽中。 对称的突出部分在衬底的表面上对称地突出。