发明申请
US20150333252A1 PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME
审中-公开
具有偏心电极的PERPENDICULAR SPIN TRANSFER TORQUE MEMORY（STTM）装置及其形成方法
- 专利标题： PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME
- 专利标题（中）： 具有偏心电极的PERPENDICULAR SPIN TRANSFER TORQUE MEMORY（STTM）装置及其形成方法
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申请号： US14812655申请日： 2015-07-29
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公开(公告)号： US20150333252A1公开(公告)日： 2015-11-19
- 发明人: Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
- 申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/08 ; H01L27/22 ; H01L43/10 ; G11C11/16
摘要：
Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
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