Invention Application
US20160049495A1 SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FABRICATION METHODS 有权
具有共振阻挡栅层和制造方法的半导体结构

SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FABRICATION METHODS
Abstract:
Semiconductor structures and fabrication methods are provided which includes, for instance, providing a gate structure over a semiconductor substrate, the gate structure including multiple conformal gate layers and a gate material disposed within the multiple conformal gate layers; recessing a portion of the multiple conformal gate layers below an upper surface of the gate structure, where upper surfaces of recessed, multiple conformal gate layers are coplanar; and removing a portion of the gate material to facilitate an upper surface of a remaining portion of the gate material to be coplanar with an upper surface of the recessed, multiple conformal gate layers.
Information query
Patent Agency Ranking
0/0