Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14835284Application Date: 2015-08-25
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Publication No.: US20160064323A1Publication Date: 2016-03-03
- Inventor: Hiroaki SEKIKAWA , Hidenori SATO , Yotaro GOTO , Takuya MARUYAMA , Masaaki SHINOHARA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Priority: JP2014-174143 20140828
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/146 ; H01L21/3105 ; H01L23/522 ; H01L23/532 ; H01L21/768

Abstract:
A connection portion connects a copper-based first wiring layer with a copper-based second wiring layer arranged on the upper side of a first diffusion barrier film. The first diffusion barrier film includes a first opening region formed in a semiconductor circuit region that is a partial region in a two-dimensional view and a second opening region formed as an opening region different from the first opening region in a two-dimensional view. The opening regions are formed in a region different from an opening region formed to allow the connection portion to pass through the first diffusion barrier film. A mark wiring layer is arranged immediately above the second opening region as the same layer as the second wiring layer. A second diffusion barrier film is arranged in contact with the upper surface of the mark wiring layer.
Public/Granted literature
- US09553121B2 Semiconductor device and method of manufacturing the same Public/Granted day:2017-01-24
Information query
IPC分类: