Invention Application
US20160086645A1 METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORY APPLICATIONS AND THE MAGNETIC JUNCTIONS SO FORMED
有权
提供薄（001）方向的方法用于磁性转移的磁性层的MgO层可用于转移转矩磁记忆应用和形成的磁性结
- Patent Title: METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORY APPLICATIONS AND THE MAGNETIC JUNCTIONS SO FORMED
- Patent Title (中): 提供薄（001）方向的方法用于磁性转移的磁性层的MgO层可用于转移转矩磁记忆应用和形成的磁性结
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Application No.: US14852422Application Date: 2015-09-11
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Publication No.: US20160086645A1Publication Date: 2016-03-24
- Inventor: Dustin William Erickson , Xueti Tang , Jangeun Lee , Eugene Chen
- Applicant: Samsung Electronics Co., LTD.
- Main IPC: G11C11/14
- IPC: G11C11/14 ; C23C14/34 ; C23C14/58 ; G11C11/16
Abstract:
A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
Public/Granted literature
- US09799382B2 Method for providing a magnetic junction on a substrate and usable in a magnetic device Public/Granted day:2017-10-24
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