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公开(公告)号：US20170141296A1
公开(公告)日：2017-05-18
申请号：US15066721
申请日：2016-03-10
Applicant: Samsung Electronics Co., LTD.
Inventor： Dmytro Apalkov , Dustin William Erickson , Vladimir Nikitin
CPC classification number: H01L43/08 , G11C11/161 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. At least one of the steps of providing the free layer and providing the pinned layer includes providing magnetic and sacrificial layers and performing two anneals of the sacrificial and magnetic layers. The magnetic layer includes a glass-promoting component and is amorphous as-deposited. The first anneal is at a first temperature exceeding 300 degrees Celsius and not exceeding 450 degrees Celsius. The second anneal is at a second temperature greater than the first temperature and performed after the first anneal. The sacrificial layer is removed.
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公开(公告)号：US09799382B2
公开(公告)日：2017-10-24
申请号：US14852422
申请日：2015-09-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee , Eugene Chen
CPC classification number: G11C11/14 , C23C14/081 , C23C14/5806 , C23C14/5873 , G11C11/161
Abstract: A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
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公开(公告)号：US20170256708A1
公开(公告)日：2017-09-07
申请号：US15177159
申请日：2016-06-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Mohamad Towfik Krounbi , Dustin William Erickson , Xueti Tang , Donkoun Lee
CPC classification number: H01L43/12 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.
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4.发明申请METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORY APPLICATIONS AND THE MAGNETIC JUNCTIONS SO FORMED 有权提供薄（001）方向的方法用于磁性转移的磁性层的MgO层可用于转移转矩磁记忆应用和形成的磁性结公开(公告)号：US20160086645A1
公开(公告)日：2016-03-24
申请号：US14852422
申请日：2015-09-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee , Eugene Chen
CPC classification number: G11C11/14 , C23C14/081 , C23C14/5806 , C23C14/5873 , G11C11/161
Abstract: A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁性结的磁结的方法。 提供了参考层，结晶MgO隧道势垒层和自由层。 结晶MgO隧道势垒层是连续的，具有（001）取向并且具有不超过11埃和不小于2埃的厚度。 结晶MgO隧道势垒层位于自由层和参考层之间。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。
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公开(公告)号：US09735350B2
公开(公告)日：2017-08-15
申请号：US14981107
申请日：2015-12-28
Applicant: Samsung Electronics Co., LTD.
Inventor： Robert Beach , Roman Chepulskyy , Dustin William Erickson , Vladimir Nikitin
Abstract: A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-forming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.
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Patent Agency Ranking
6.发明授权Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer 有权提供可用于使用牺牲插入层的自旋转移扭矩磁性装置中的垂直磁各向异性磁结的方法公开(公告)号：US09559296B2
公开(公告)日：2017-01-31
申请号：US14712792
申请日：2015-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee
Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括在自由层和钉扎层之间提供自由层，钉扎层和非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 提供自由层的步骤中的至少一个包括第一多个步骤，并且提供钉扎层的步骤包括第二多个步骤。 第一和第二多个步骤包括沉积层的一部分，沉积牺牲层，将牺牲层下面的磁结的部分退火，以及沉积该层的剩余部分。 该层可以是自由层，钉扎层或两者。
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7.发明申请METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING FREE LAYERS THAT ARE COBALT-FREE 有权用于提供磁性结的方法和系统，包括无钴的自由层公开(公告)号：US20160197119A1
公开(公告)日：2016-07-07
申请号：US14977094
申请日：2015-12-21
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang-Eun Lee , Gen Feng , Dustin William Erickson
CPC classification number: H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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8.发明申请METHOD AND SYSTEM FOR PROVIDING A THIN PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 审中-公开用于在旋转传动扭矩磁性随机存取存储器应用中使用的全能磁连接中提供薄型密封层的方法和系统公开(公告)号：US20160005791A1
公开(公告)日：2016-01-07
申请号：US14731164
申请日：2015-06-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xueti Tang , Dustin William Erickson , Jangeun Lee
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The nonmagnetic spacer layer and the free layer are between the pinned layer and the substrate. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy and a thickness of not more than thirty Angstroms.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 钉扎层具有大于面外退磁能的垂直磁各向异性能。 非磁性间隔层和自由层位于被钉扎层和基底之间。 被钉扎层具有垂直磁各向异性能量的钉扎层，其能量大于被钉扎层的面外退磁能量和不超过三十埃的厚度。
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公开(公告)号：US10164175B2
公开(公告)日：2018-12-25
申请号：US15177159
申请日：2016-06-08
Applicant: Samsung Electronics Co., LTD.
Inventor： Mohamad Towfik Krounbi , Dustin William Erickson , Xueti Tang , Donkoun Lee
Abstract: A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.
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10.发明授权Method and system for providing magnetic junctions including free layers that are cobalt-free 有权提供包括无钴的自由层的磁连接的方法和系统公开(公告)号：US09559143B2
公开(公告)日：2017-01-31
申请号：US14977094
申请日：2015-12-21
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang-Eun Lee , Gen Feng , Dustin William Erickson
IPC: H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/22 , H01L43/02 , H01L43/10 , H01L43/12
CPC classification number: H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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