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公开(公告)号：US11588100B2
公开(公告)日：2023-02-21
申请号：US17401620
申请日：2021-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
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公开(公告)号：US09343660B2
公开(公告)日：2016-05-17
申请号：US14583831
申请日：2014-12-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
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公开(公告)号：US09048417B2
公开(公告)日：2015-06-02
申请号：US14464835
申请日：2014-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Abstract translation: 提供磁存储器件。 所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。
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公开(公告)号：US20130241037A1
公开(公告)日：2013-09-19
申请号：US13875731
申请日：2013-05-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junho Jeong , Sukhun Choi , Jangeun Lee , Kyunghyun Kim , Sechung Oh , Kyungtae Nam
IPC: H01L49/02
CPC classification number: H01L28/20 , H01L21/7684 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/147 , H01L45/1616 , H01L45/1625 , H01L45/1641
Abstract: Methods of fabricating semiconductor devices are provided including forming a dielectric interlayer on a substrate, the dielectric interlayer defining an opening therein. A metal pattern is formed in the opening. An oxidization process is performed on the metal pattern to form a conductive metal oxide pattern, and the conductive metal oxide pattern is planarized. Related semiconductor devices are also provided.
Abstract translation: 提供了制造半导体器件的方法，包括在衬底上形成电介质中间层，电介质层间限定开口。 在开口中形成金属图案。 对金属图案进行氧化处理以形成导电金属氧化物图案，并且导电金属氧化物图案被平坦化。 还提供了相关的半导体器件。
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公开(公告)号：US11121309B2
公开(公告)日：2021-09-14
申请号：US16901866
申请日：2020-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
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Patent Agency Ranking
6.发明授权Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer 有权提供可用于使用牺牲插入层的自旋转移扭矩磁性装置中的垂直磁各向异性磁结的方法公开(公告)号：US09559296B2
公开(公告)日：2017-01-31
申请号：US14712792
申请日：2015-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee
Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 该方法包括在自由层和钉扎层之间提供自由层，钉扎层和非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 提供自由层的步骤中的至少一个包括第一多个步骤，并且提供钉扎层的步骤包括第二多个步骤。 第一和第二多个步骤包括沉积层的一部分，沉积牺牲层，将牺牲层下面的磁结的部分退火，以及沉积该层的剩余部分。 该层可以是自由层，钉扎层或两者。
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7.发明申请METHOD AND SYSTEM FOR PROVIDING A THIN PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 审中-公开用于在旋转传动扭矩磁性随机存取存储器应用中使用的全能磁连接中提供薄型密封层的方法和系统公开(公告)号：US20160005791A1
公开(公告)日：2016-01-07
申请号：US14731164
申请日：2015-06-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xueti Tang , Dustin William Erickson , Jangeun Lee
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The nonmagnetic spacer layer and the free layer are between the pinned layer and the substrate. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy and a thickness of not more than thirty Angstroms.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 钉扎层具有大于面外退磁能的垂直磁各向异性能。 非磁性间隔层和自由层位于被钉扎层和基底之间。 被钉扎层具有垂直磁各向异性能量的钉扎层，其能量大于被钉扎层的面外退磁能量和不超过三十埃的厚度。
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公开(公告)号：US08847341B2
公开(公告)日：2014-09-30
申请号：US13926048
申请日：2013-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层，第一垂直磁性层和第二垂直磁性层之间的隧道势垒层，以及在第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。
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公开(公告)号：US20210104661A1
公开(公告)日：2021-04-08
申请号：US16901866
申请日：2020-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
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公开(公告)号：US09799382B2
公开(公告)日：2017-10-24
申请号：US14852422
申请日：2015-09-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee , Eugene Chen
CPC classification number: G11C11/14 , C23C14/081 , C23C14/5806 , C23C14/5873 , G11C11/161
Abstract: A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
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