Invention Application
- Patent Title: NONVOLATILE MEMORY MODULE
- Patent Title (中): 非易失性存储器模块
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Application No.: US14498480Application Date: 2014-09-26
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Publication No.: US20160093377A1Publication Date: 2016-03-31
- Inventor: Mani Prakash , Edward L. Payton , John K. Grooms , Dimitrios Ziakas , Mohammed Arafa , Raj K. Ramanujan , Dong Wang
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C7/10 ; G11C11/406

Abstract:
Memory modules, controllers, and electronic devices comprising memory modules are described. In one embodiment, a memory module comprises a nonvolatile memory and an interface to a volatile memory bus, at least one input power rail to receive power from a host platform, and a controller comprising logic, at least partially including hardware logic, to convert the power from the input power rail from an input voltage to at least one output voltage, different from the input voltage. Other embodiments are also disclosed and claimed.
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