Invention Application
US20160099157A1 BARC-ASSISTED PROCESS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS
有权
用于平面记录或移除可变高度层的BARC辅助过程
- Patent Title: BARC-ASSISTED PROCESS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS
- Patent Title (中): 用于平面记录或移除可变高度层的BARC辅助过程
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Application No.: US14967741Application Date: 2015-12-14
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Publication No.: US20160099157A1Publication Date: 2016-04-07
- Inventor: Wen-Kuei Liu , Teng-Chun Tsai , Kuo-Yin Lin , Shen-Nan Lee , Yu-Wei Chou , Kuo-Cheng Lien , Chang-Sheng Lin , Chih-Chang Hung , Yung-Cheng Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L29/06 ; H01L21/02 ; H01L21/311 ; H01L21/308

Abstract:
The present disclosure provides a method of manufacturing an integrated circuit device in some embodiments. In the method, a semiconductor substrate is processed through a series of operations to form a topographically variable surface over the semiconductor substrate. The topographically variable surface varies in height across the semiconductor substrate. A polymeric bottom anti-reflective coating (BARC) is provided over the topographically variable surface. Chemical mechanical polishing is performed to remove a first portion of the BARC, and etching effectuates a top-down recessing of the BARC.
Public/Granted literature
- US09478431B2 BARC-assisted process for planar recessing or removing of variable-height layers Public/Granted day:2016-10-25
Information query
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