Invention Application
- Patent Title: METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
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Application No.: US15075709Application Date: 2016-03-21
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Publication No.: US20160204001A1Publication Date: 2016-07-14
- Inventor: Hyosan Lee , Yongsun Ko , Kyoungseob Kim , Kuntack Lee , Jihoon Jeong , Chen Lin , Christopher K. Ober
- Applicant: Hyosan Lee , Yongsun Ko , Kyoungseob Kim , Kuntack Lee , Jihoon Jeong , Chen Lin , Christopher K. Ober
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L23/00 ; H01L21/027 ; H01L21/768 ; H01L21/311
Abstract:
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
Public/Granted literature
- US10155903B2 Metal etchant compositions and methods of fabricating a semiconductor device using the same Public/Granted day:2018-12-18
Information query
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