摘要:
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
摘要:
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
摘要:
The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.
摘要:
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
摘要:
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.