Invention Application
US20160204034A1 METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A PLURALITY OF FINS AND AN ALIGNMENT/OVERLAY MARK
有权
形成半导体结构的方法，包括大量的FINS和对齐/覆盖标记
- Patent Title: METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A PLURALITY OF FINS AND AN ALIGNMENT/OVERLAY MARK
- Patent Title (中): 形成半导体结构的方法，包括大量的FINS和对齐/覆盖标记
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Application No.: US14687203Application Date: 2015-04-15
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Publication No.: US20160204034A1Publication Date: 2016-07-14
- Inventor: Min Gyu Sung , Chanro Park , Hoon Kim , Ruilong Xie
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/027 ; H01L21/308 ; H01L21/02 ; H01L21/311 ; H01L21/306
Abstract:
A method includes providing a semiconductor structure including a substrate that includes a material to be patterned. First and second mandrels are formed over the substrate using a common photolithography process that defines a position of the first mandrel relative to the substrate and a position of the second mandrel relative to the substrate. A first sidewall spacer is formed adjacent the first mandrel and a second sidewall spacer is formed adjacent the second mandrel. After the formation of the first and the second sidewall spacers, the first mandrel is removed. The second mandrel remains in the semiconductor structure. A first mask element is provided on the basis of the first sidewall spacer. A second mask element is provided on the basis of the second mandrel and the second sidewall spacer. The material to be patterned is patterned on the basis of the first and the second mask elements.
Public/Granted literature
- US09379017B1 Method of forming a semiconductor structure including a plurality of fins and an alignment/overlay mark Public/Granted day:2016-06-28
Information query
IPC分类:
