发明申请
US20160343816A1 NON-VOLATILE MEMORY DEVICE INCLUDING NANO FLOATING GATE WITH NANOPARTICLE AND METHOD FOR FABRICATING THE SAME
审中-公开
包括纳米级纳米浮选门的非易失性存储器件及其制造方法
- 专利标题： NON-VOLATILE MEMORY DEVICE INCLUDING NANO FLOATING GATE WITH NANOPARTICLE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 包括纳米级纳米浮选门的非易失性存储器件及其制造方法
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申请号： US15228943申请日： 2016-08-04
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公开(公告)号： US20160343816A1公开(公告)日： 2016-11-24
- 发明人: Jun-Hyung KIM
- 申请人： SK INNOVATION CO., LTD.
- 专利权人： SK INNOVATION CO., LTD.
- 当前专利权人： SK INNOVATION CO., LTD.
- 优先权： KR10-2013-0159736 20131219
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/51 ; H01L51/05 ; H01L21/28 ; H01L29/66 ; H01L29/788 ; H01L27/115
摘要：
A non-volatile memory device includes a floating gate for charging and discharging of charges over a substrate. The floating gate comprises a linker layer formed over the substrate and including linkers to be bonded to metal ions and metallic nanoparticles formed out of the metal ions over the linker layer.
公开/授权文献
- US10038068B2 Non-volatile memory device including nano floating gate 公开/授权日：2018-07-31